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AN INNOVATIVE APPROACH TO PRODUCE MULTI-MEGARAD HARD ELECTRONIC DEVICES FOR…

Award Information

Agency:
Department of Defense 		Branch:
Defense Threat Reduction Agency 		Award ID:
3872 		Program Year/Program:
1986 / SBIR
Agency Tracking Number:
3872 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1986
Title: AN INNOVATIVE APPROACH TO PRODUCE MULTI-MEGARAD HARD ELECTRONIC DEVICES FOR SPACEBORNE APPLICATIONS HAS BEEN PROPOSED, WHEREBY JUNCTION FIELD EFFECT TRANSISTORS (JFET) ARE DEVELOPED USING SILICON-ONINSULATOR (SOI) TECHNOLOGY.
Agency / Branch: DOD / DTRA
Contract: N/A
Award Amount: $57,998.00
 

Abstract:

AN INNOVATIVE APPROACH TO PRODUCE MULTI-MEGARAD HARD ELECTRONIC DEVICES FOR SPACEBORNE APPLICATIONS HAS BEEN PROPOSED, WHEREBY JUNCTION FIELD EFFECT TRANSISTORS (JFET) ARE DEVELOPED USING SILICON-ONINSULATOR (SOI) TECHNOLOGY. THE MULTIMEGARAD HARDNESS IS DERIVED FROM THE 'BURIED' CHANNEL OF THE JFET DEVICES AND THE REDUCTION OF ELECTROMIGRATION OF TRAPPED AND INDUCED CHARGES OF THE WELL-MATCHED SILICON/OXIDE INTERFACE OF THE SILICON-ON-INSULATOR WAFER, FABRICATED BY OXYGEN IMPLANT OF SILICON WAFER. THIS PROPOSED EFFORT IS PHASE 1 OF A 3-PHASE PROGRAM, CONCEIVED SPECIFICALLY TO EXPLOIT THE EMERGING SOI TECHNOLOGY BASED ON THE SILICON-IMPLANT-OXIDE (SIMOX) PROCESS. THE MAJOR TASKS FOR PHASE I ARE: ANALYSIS AND MODELING OF COMPLEMENTARY JFET (CJFET) DEVICES AND CIRCUITS.

Principal Investigator:

Michael lee
2133738779

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
23887 Madison St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No