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HGCDTE EPITAXY ON SI SUBSTRATE

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
5785
Program Year/Program:
1987 / SBIR
Agency Tracking Number:
5785
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1987
Title: HGCDTE EPITAXY ON SI SUBSTRATE
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $65,275.00
 

Abstract:

A PROPOSAL IS MADE ON AN INNOVATIVE APPROACH TO PERFORM EPITAXIAL GROWTH OF HIGH-QUALITY HGCDTE(HCT) MATERIAL ON SILICON (SI) SUBSTRATES BY MOLECULAR BEAM EPITAXY (MBE). BY USING SI SUBSTRATE, A LARGE SURFACE AREA OF HCT EPITAXIAL LAYER CAN BE MADE RESULTING IN A POTENTIALLY COST-EFFECTIVE METHOD OF FABRICATING LARGE DETECTOR ARRAYS. THE PROPOSED INNOVATION FIRST EMPLOYS THE MBE TECHNIQUE TO FORM A PERFECTLY-BUFFERED SILICON SUBSTRATE ON WHICH TO PERFORM THE EPITAXY OF HCT. IT IS THEN FOLLOWED BY THE EPITAXY OF LOW DEFECT, HIGHLY UNIFORM HCT EPILAYER. THE OBJECTIVE OF PHASE I OF THE PROPOSED PROGRAM ARE: TO DEFINE AND DELINEATE THE COMPLETE MBE PROCESS FOR PERFORMING HGCDTE EPITAXY AND BUFFERED SUBSTRATES. TO ESTABLISH THE MBE COMPONENTS AND SUBSTRATE PREPARATION REQUIREMENTS.

Principal Investigator:

William s chan
2133738779

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No