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REACTIVE ION-BEAM EPITAXY OF ULTRASTRUCTURE FOR HIGH-T(C) SUPERCONDUCTOR FILMS

Award Information

Agency:
Department of Defense 		Branch:
Air Force 		Award ID:
9663 		Program Year/Program:
1989 / SBIR
Agency Tracking Number:
9663 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: REACTIVE ION-BEAM EPITAXY OF ULTRASTRUCTURE FOR HIGH-T(C) SUPERCONDUCTOR FILMS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $59,949.00
 

Abstract:

THIS EFFORT WILL INVESTIGATE THE CONTROLLED EPITAXY OF ULTRA-THIN, ALTERNATING LAYERS OF CUO AND BISRCAO ON A BUFFERED SI SUBSTRATE, FORMING AN ULTRASTRUCTURE APPROXIMATING CLOSELY THE MULTILAYERED STRUCTURE OF THE BISRCACUO SUPERCONDUCTOR. THE HIGH-QUALITY AND HIGH-RATE OF EPITAXIAL GROWTH IS ACCOMPLISHED BY DIRECT REACTION OF THE IONIC SPECIES ON THE SUBSTRATE SURFACE. THIS REACTION IS ENHANCED BY A FOCUSED PLASMA OF HIGHLY REACTIVE ATOMIC OXYGEN GENERATED BY AN ELECTRON-CYCLOTRON-RESONANCE SOURCE. FAST RESPONSE COMPUTER-CONTROLLED SHUTTERS WILL BE USED TO PERFORM THE EPITAXY OF THE ALTERNATING LAYERS WITH SHARP INTERFACES. THE MAIN OBJECTIVE OF THIS RESEARCH IS TO DEVELOP A WELL-CONTROLLED, REACTIVE MOLECULAR BEAM EPITAXY (RMBE) PROCESS FOR GROWTH OF SINGLE CRYSTALLINE, SINGLE PHASE FILMS NECESSARY TO SUPPORT HIGH-TC SUPERCONDUCTIVITY THROUGHOUT THE FILM STRUCTURE. THESE FILMS WILL BE DEVELOPED PRIMARILY FOR INFRARED DETECTION APPLICATIONS.

Principal Investigator:

William S Chan
2135343666

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No