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RADIATION-HARD VJFET DEVICES ON SOI SUBSTRATES

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
9664
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
9664
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: RADIATION-HARD VJFET DEVICES ON SOI SUBSTRATES
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $65,022.00
 

Abstract:

MANY ADVANCED MICROCIRCUITS USED IN MILITARY SYSTEMS HAVE TO BE HIGH SPEED, LOW NOISE AND RADIATION HARD, PARTICULARLY RADIATION HARD AGAINST NEUTRON IRRADIATION. A PROPOSAL IS MADE FOR THE DEVELOPMENT OF AN INNOVATIVE TECHNOLOGY FOR FABRICATING V-GROOVED JUNCTION-FIELD-EFFECT TRANSISTOR (VJFET) AND MICROCIRCUITS ON SILICON-ON-INSULATOR (SOI) WAFERS TO MEET THESE ADVANCED REQUIREMENTS. THIS TECHNOLOGY USES MICROMACHINING TO FABRICATE MICRO V-GROOVES TO SUPPORT THE FORMATION OF JFET DEVICES HAVING SUBMICRON GATE LENGTHS AND SELF-ALIGNED GATE CONFIGURATIONS, RESULTING IN VJFET STRUCTURES WITH TIGHTLY-CONTROLLED SUBMICRON DIMENSIONS NECESSARY FOR VERY HIGH-SPEED, LOW NOISE AND RADIATION-HARD APPLICATIONS. THE SOI WAFER WILL ELIMINATE LATCH-UP EFFECTS, REDUCE NEUTRON-CAPTURE VOLUME AND PROVIDE ELECTRICAL ISOLATION FOR VJFET MICROCIRCUIT FABRICATION. THE RESULTANT VJFET IS HIGHLY DESIRABLE FOR FABRICATING VERY HIGH-SPEED (20 GIGAHZ) MICROCIRCUITS THAT MUST SURVIVE HIGH RADIATION (NATURAL OR INDUCED) ENVIRONMENTS. THE AIM OF PHASE I IS TO ESTABLISH A MODEL FOR THE VJFET AND TO DEFINE THE PROCESSES AND REQUIREMENTS FOR FABRICATING THE DESIRED SUBMICRON STRUCTURES.

Principal Investigator:

Dr Jim Shie
2135343666

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No