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RADIATION-HARD VJFET DEVICES ON SOI SUBSTRATES
- Small Business Information
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Woman-Owned: YesMinority-Owned: YesHUBZone-Owned: No
- Phase 1
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Fiscal Year: 1989Title: RADIATION-HARD VJFET DEVICES ON SOI SUBSTRATESAgency / Branch: DOD / USAFContract: N/AAward Amount: $65,022.00
Abstract:
MANY ADVANCED MICROCIRCUITS USED IN MILITARY SYSTEMS HAVE TO BE HIGH SPEED, LOW NOISE AND RADIATION HARD, PARTICULARLY RADIATION HARD AGAINST NEUTRON IRRADIATION. A PROPOSAL IS MADE FOR THE DEVELOPMENT OF AN INNOVATIVE TECHNOLOGY FOR FABRICATING V-GROOVED JUNCTION-FIELD-EFFECT TRANSISTOR (VJFET) AND MICROCIRCUITS ON SILICON-ON-INSULATOR (SOI) WAFERS TO MEET THESE ADVANCED REQUIREMENTS. THIS TECHNOLOGY USES MICROMACHINING TO FABRICATE MICRO V-GROOVES TO SUPPORT THE FORMATION OF JFET DEVICES HAVING SUBMICRON GATE LENGTHS AND SELF-ALIGNED GATE CONFIGURATIONS, RESULTING IN VJFET STRUCTURES WITH TIGHTLY-CONTROLLED SUBMICRON DIMENSIONS NECESSARY FOR VERY HIGH-SPEED, LOW NOISE AND RADIATION-HARD APPLICATIONS. THE SOI WAFER WILL ELIMINATE LATCH-UP EFFECTS, REDUCE NEUTRON-CAPTURE VOLUME AND PROVIDE ELECTRICAL ISOLATION FOR VJFET MICROCIRCUIT FABRICATION. THE RESULTANT VJFET IS HIGHLY DESIRABLE FOR FABRICATING VERY HIGH-SPEED (20 GIGAHZ) MICROCIRCUITS THAT MUST SURVIVE HIGH RADIATION (NATURAL OR INDUCED) ENVIRONMENTS. THE AIM OF PHASE I IS TO ESTABLISH A MODEL FOR THE VJFET AND TO DEFINE THE PROCESSES AND REQUIREMENTS FOR FABRICATING THE DESIRED SUBMICRON STRUCTURES.Small Business Information at Submission:Principal Investigator:
Dr Jim Shie
2135343666Business Contact:
Electro-optek Corp
3152 Kashiwa St Torrance, CA 90505EIN/Tax ID:DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Air Force |
Award ID: 9664 |
Program Year/Program: 1989 / SBIR |
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Agency Tracking Number: 9664 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |