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CRYOGENICALLY-COOLED INSB JFET

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
10438
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
10438
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1990
Title: CRYOGENICALLY-COOLED INSB JFET
Agency: NASA
Contract: N/A
Award Amount: $495,369.00
 

Abstract:

MANY MICROELECTRONIC CIRCUITS USED IN HIGH-PERFORMANCE INFRARED SYSTEMS ARE REQUIRED TO OPERATE AT CRYOGENIC TEMPERATURES AND BE LOW NOISE AT THE SAME TIME. THESE APPLICATIONS DEMAND INNOVATIONS. THE DEVELOPMENT OF A NEW AND INNOVATIVE TECHNOLOGY FOR INSB JUNCTION-FIELD-EFFECT TRANSISTOR (JFET) DEVICES AND CIRCUITS IS PROPOSED. IT IS BASED ON MOLECULAR BEAM EPITAXY (MBE) OF INSB LAYERS ON INSBAND SAPPHIRE SUBSTRATES. THE N- AND P-LAYERS CAN BE MADE BY IN-SITU DOPING, THUS THE JFET STRUCTURE CAN BE FABRICATEDREADILY BY MBE. THE RESULTANT INSB JFET DEVICES CAN BE OPERATED AT A TEMPERATURE BELOW 2K AND ARE CAPABLE OF EXTREMELY LOW NOISE (< 1 NANOVOLT/HZ(1/2), TWO HIGHLY DESIRABLE CHARACTERISTICS FOR ELECTRONICS FOR INFRARED (IR) SENSORS IN THE LONG WAVE-LENGTH IR (LWIR) SPECTRAL REGION. THE AIM OF PHASE I IS TO ESTABLISH THE LOW TEMPERATURE MODEL FOR INSB JFET AND TO DEFINE THE MBE PROCESSES AND REQUIREMENTS TO FABRICATE THE MULTIEPILAYER STRUCTURE.

Principal Investigator:

Dr William S Chan

Business Contact:

Small Business Information at Submission:

Electro-optek Corp.
3152 Kashiwa St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No