FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY

Award Information

Agency: National Science Foundation	Branch: N/A	Award ID: 11775	Program Year/Program: 1990 / SBIR
Agency Tracking Number: 11775	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes

Minority-Owned: Yes

HUBZone-Owned: No

Phase 1: Fiscal Year: 1990

Title: FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY

Agency: NSF

Contract: N/A

Award Amount: $49,988.00

Abstract:
A PROPOSAL IS MADE TO DEVELOP HIGH-PERFORMANCE INSB DETECTORARRAYS BY MOLECULAR BEAM EPITAXY (MBE) ON GAAS. THIS EFFORTWILL FIRST DEVELOP TWO STRAINED SUPERLATTICES (SSL) IN TANDEM FOR A NEAR-PERFECT LATTICE MATCH BETWEEN THE INSB AND GAAS, AND THEN FABRICATE THE P-N JUNCTIONS FOR THE 3-5 MICRON SPECTRAL REGION. THE SUPERLATTICE BUFFER WILL SERVE TO BLOCK MISFIT DISLOCATIONS FROM PROPAGATING INTO THE INSB. THE EPITAXY OF THE N-TYPE AND P-TYPE EPILAYERS WILL BE MADE IN TANDEM BY IN-SITU DOPING TO FORM THE P-N JUNCTIONDETECTORS.

Principal Investigator:
Dr C F Huang
Research Engineer
0

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505

EIN/Tax ID:

DUNS: N/A

Number of Employees: N/A

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No