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FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
11775
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
11775
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
View profile »
Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1990
Title: FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY
Agency: NSF
Contract: N/A
Award Amount: $49,988.00
 

Abstract:

A PROPOSAL IS MADE TO DEVELOP HIGH-PERFORMANCE INSB DETECTORARRAYS BY MOLECULAR BEAM EPITAXY (MBE) ON GAAS. THIS EFFORTWILL FIRST DEVELOP TWO STRAINED SUPERLATTICES (SSL) IN TANDEM FOR A NEAR-PERFECT LATTICE MATCH BETWEEN THE INSB AND GAAS, AND THEN FABRICATE THE P-N JUNCTIONS FOR THE 3-5 MICRON SPECTRAL REGION. THE SUPERLATTICE BUFFER WILL SERVE TO BLOCK MISFIT DISLOCATIONS FROM PROPAGATING INTO THE INSB. THE EPITAXY OF THE N-TYPE AND P-TYPE EPILAYERS WILL BE MADE IN TANDEM BY IN-SITU DOPING TO FORM THE P-N JUNCTIONDETECTORS.

Principal Investigator:

Dr C F Huang
Research Engineer
0

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No