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IN-SITU GROWTH OF INDIUM ARSENIDE ANTIMONIDE LONGWAVELENGTH PHOTODIODES

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 11774
Amount: $252,228.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1992
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
3152 Kashiwa Street
Torrance, CA 90505
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 William S Chan
 President
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract

THE RECENT ADVANCES IN BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) HAVE PRODUCED A STRAINED SUPERLATTICE (SSL) OF INSB/INA -XSBX CAPABLE OF BEING MADE INTO PHOTODIODE DETECTORS SUITABLE FOR THE LONG WAVELENGTH INFRARED (LWIR, 8-14 MICRON) SPECTRAL RANGE. THIS PROPOSAL IS MADE TO DEVELOP THE PHOTODIODES DURING EPITAXY OF THE SSLON BUFFERED SILICON (SI). THE EFFORT WILL DEVELOP A SUITABLE MULTILAYERED BUFFER FOR NEAR-PERFECT LATTICE MATCHING BETWEEN THE SI AND SSL, GROW THE SSL TAILORED FOR LWIR AND FORM THE PHOTODIODES IN-SITU. SPECIAL EFFUSION SOURCES, EPITAXIAL PROCESSES AND TRIAL EPITAXY WILL BE DESIGNED, DELINEATED AND MADE, RESPECTIVELY, IN PHASE I FOR THE PHOTODIODE DEVELOPMENT.

* Information listed above is at the time of submission. *

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