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IN-SITU GROWTH OF INDIUM ARSENIDE ANTIMONIDE LONGWAVELENGTH PHOTODIODES
Title: President
Phone: () -
THE RECENT ADVANCES IN BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) HAVE PRODUCED A STRAINED SUPERLATTICE (SSL) OF INSB/INA -XSBX CAPABLE OF BEING MADE INTO PHOTODIODE DETECTORS SUITABLE FOR THE LONG WAVELENGTH INFRARED (LWIR, 8-14 MICRON) SPECTRAL RANGE. THIS PROPOSAL IS MADE TO DEVELOP THE PHOTODIODES DURING EPITAXY OF THE SSLON BUFFERED SILICON (SI). THE EFFORT WILL DEVELOP A SUITABLE MULTILAYERED BUFFER FOR NEAR-PERFECT LATTICE MATCHING BETWEEN THE SI AND SSL, GROW THE SSL TAILORED FOR LWIR AND FORM THE PHOTODIODES IN-SITU. SPECIAL EFFUSION SOURCES, EPITAXIAL PROCESSES AND TRIAL EPITAXY WILL BE DESIGNED, DELINEATED AND MADE, RESPECTIVELY, IN PHASE I FOR THE PHOTODIODE DEVELOPMENT.
* Information listed above is at the time of submission. *