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FABRICATION OF LONG WAVELENGTH ARRAY BY IN-SITU MOLECULAR BEAM EPITAXY

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
15827
Program Year/Program:
1991 / SBIR
Agency Tracking Number:
15827
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
View profile »
Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1991
Title: FABRICATION OF LONG WAVELENGTH ARRAY BY IN-SITU MOLECULAR BEAM EPITAXY
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $52,641.00
 

Abstract:

BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) IS NOT ONLY CAPABLE OF PRODUCING A STRAINED SUPERLATTICE (SSL) OF INSB/INAS(1-X)SB(X) FOR LONGWAVELENGTH INFRARED (LWIR, 8-12 MICRON) DETECTORS, BUT IS ALSO CAPABLE OF PROCESSING THE DETECTORS INTO A MONOLITHIC ARRAY. WE WILL DEVELOP THE MBE PROCESS FIRST TO GROW THE SSL ON A BUFFERED SILICON (SI) SUBSTRATE AND THEN DELINATE THE SSL INTO AN ARRAY OF PHOTODIODES WHICH CAN BE INTERFACED DIRECTLY ONTO A READOUT CIRCUITRY PREVIOUSLY FABRICATED ON THE SAME SI SUBSTRATE. THUS, A MONOLITHIC ARRAY IS FABRICATED IN-SITU DURING A SINGLE EPITAXY PROCESS. THE KEY INNOVATION PROPOSED IS THE COMBINING OF THE SSL EPITAXY, PHOTODIODE FORMATION AND READOUT ELECTRONIC INTERFACING AS A SINGLE PROCESS FOR FABRICATING THE MONOLITHIC ARRAY. WHEN SUCCESSFULLY DEVELOPED, THE PROCESS SHOULD BE HIGH YIELD, LOW COST AND CAPABLE OF PRODUCING HIGH-PERFORMANCE LWIR DETECTOR ARRAYS BY ELIMINATING THE USE OF WET CHEMICAL ETCHING.

Principal Investigator:

C F Huang
Principal Investigator
2135343666

Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No