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SILICON BASED UNCOOLED HIGH PERFORMANCE LWIR ARRAYS

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
17185
Program Year/Program:
1991 / SBIR
Agency Tracking Number:
17185
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1991
Title: SILICON BASED UNCOOLED HIGH PERFORMANCE LWIR ARRAYS
Agency / Branch: DOD / DARPA
Contract: N/A
Award Amount: $49,894.00
 

Abstract:

ELECTRO-OPTEK PROPOSES TO DEVELOP A NOVEL AND INNOVATIVE METHOD OF FABRICATING LARGE-AREA LONG WAVELENGTH INFRARED (LWIR) DETECTOR ARRAYS THAT CAN OPERATE AT ROOM TEMPERATURE. THIS TECHNIQUE USES ESTABLISHED TECHNOLOGIES OF MICRO-MACHINING AND MICROELECTRONIC PROCESSING OF SILICON (SI) WAFERS FOR FABRICATING MONOLITHIC ARRAYS OF LWIR DETECTORS. THE DETECTOR ELEMENTS OF THE ARRAY ARE FORMED BY AN ULTRA-THIN FILM OF A BOLOMETER MATERIAL POSSESSING THE HIGHEST TEMPERATURE COEFFICIENT OF RESISTANCE KNOWN, AND THE READOUT ELECTRONIC MICROCIRCUIT IS FABRICATED ON THE SAME SILICON CHIP NEXT TO THE ELEMENTS. THE RESULTANT DETECTOR ARRAYS WILL POSSESS FEATURES OF LOW COST, LOW WEIGHT, HIGH RESPONSIVITY AND HIGH SENSITIVITY. THE LOW COST IS DUE TO A SINGLE BATCH PROCESS IN THE ARRAY FABRICATION. THE LOW WEIGHT IS DUE TO A MONOLITHIC ARRAY STRUCTURE REQUIRING NO COOLING. THE HIGH RESPONSIVITY IS DUE A LARGE TEMPERATURE COEFFICIENT OF RESISTIVITY (>15% COMPARED TO 0.2% FOR A CONVENTIONAL BOLOMETER) OF OUR NEW BOLOMETER MATERIAL. THE HIGH SENSITIVITY IS DUE TO THE COMBINED EFFECTS OF HIGH RESPONSIVITY, LOW NOISE AND HIGH THERMAL ISOLATION OF THE BOLOMETER FROM ITS SURROUNDINGS.

Principal Investigator:


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Business Contact:

Small Business Information at Submission:

Electro-optek Corp
3152 Kashiwa St Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No