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Radiation Hard Silicon Schottky Barrier LWIR Focal Plane Arrays

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
Phase 1
Fiscal Year: 1992
Title: Radiation Hard Silicon Schottky Barrier LWIR Focal Plane Arrays
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $49,614.00


Electro-Optek proposes to fabricate ultra radiation hard, high-sensitivity, long wavelength infrared focal plane arrays using IrSi3/Si Schottky Barrier (SB) infrared detectors grown by molecular beam epitaxy on silicon-on-insulator substrates. The SB photodiodes of Iriduim siliconide/Si, are processed by a special codeposition MBE process with readout electronics on SOI substrates forming a monolithic array. The reverse bias of the SB diode will be used to tailor the spectral response in the LWIR (9-14 micron). Our overall goal is to develop the SB array with high density, and optimize it for a 40% quantum efficiency, a 1% non-uniformity and a fabrication cost comparable to that of the existing Pt-silicide SB array covering the LWIR. Since the FPAs are built on SOI substrates, the arrays will be ultra-radiation hard. These novel arrays will find applications in FLIRs, space-based interceptors and early warning and surveillance systems.

Principal Investigator:

V.k. Raman

Business Contact:

Small Business Information at Submission:

Electro-optek Corp.
3152 Kashiwa Street Torrance, CA 90505

Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No