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RADIATION-HARD GAAS BIPOLAR CIRCUITS FOR HIGH FREQUENCY APPLICATIONS

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
17961
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
17961
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electro-optek Corp
3152 Kashiwa Street Torrance, CA 90505
View profile »
Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: RADIATION-HARD GAAS BIPOLAR CIRCUITS FOR HIGH FREQUENCY APPLICATIONS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $49,985.00
 

Abstract:

WE PROPOSE TO DEVELOP ULTRA RADIATION-HARD COMPLEMENTARY HETEROJUNCTION BIPOLAR TRANSISTOR (CHBT) CIRCUITS FOR HIGH FREQUENCY APPLICATIONS SUITABLE FOR DENSE SPACEBORNE SYSTEMS. WE WILL DEVELOP A SELF-ALIGNED BASE OHMIC METAL (SABM) PROCESS WITH THIN BASE STRUCTURES TO ACHIEVE VERY HIGH CUT-OFF FREQUENCIES CLOSE TO 80 GHZ. WE WILL OPTIMIZE THE PERFORMANCE OF N-P-N AND P-N-P DEVICES ON THE SAME CHIP USING GAALAS/GAAS HETEROSTRUCTURES FOR IMPROVING THE PACKAGING DENSITY. THE CHBT DEVICES WILL BE SPECIALLY DEVELOPED FOR HIGH SPEED ANALOG SYSTEMS SUCH AS A/D CONVERTERS FOR PRESENT-DAY AND FUTURE SPACE SYSTEMS. IN PHASE I WE WILL MODEL THE CHBT DEVICE, DELINEATE ITS FABRICATION PROCESS, DESIGN THE DEVICE STRUCTURE THUS ADDRESSING SOLUTIONS TO CRITICAL ISSUES INVOLVING RADIATION HARDNESS, PACKAGING DENSITY, POWER AND NOISE PERFORMANCE. WE WILL DESIGN A TEST CHIP TO DEMONSTRATE THE CHBT'S HIGH SPEED, LOW NOISE AND LOW POWER CAPABILITY. SINCE THESE DEVICES ARE BUILT ON THIN EPITAXIAL FILMS ON SEMI-INSULATING GAAS SUBSTRATE, THEY ARE ULTRA-RADIATION HARD MAKING THEM IDEALLY SUITABLE FOR USE IN RADIATION-RICH ENVIRONMENTS.

Principal Investigator:

V.k. Raman
3105343666

Business Contact:

Small Business Information at Submission:

Electro-optek Corp.
3152 Kashiwa Street Torrance, CA 90505

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No