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Company Information:

Name: Electron Transfer Tech
Address: 155 Campus Plaza
Edison, NJ 08818
Located in HUBZone: No
Woman-Owned: No
Minority-Owned: No
URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $470,992.00 8
SBIR Phase II $400,000.00 1

Award List:

ALTERNATIVE STERILIZATION PROCESS FOR HEAT LIABLE GOODS

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr william m ayers
Award Amount: $50,000.00
Abstract:
A two step process for the sterilization of heat liable goods is proposed in which the oxidation strength of a gas or vapor is enhanced through a photochemical reaction. the photochemical reaction produces a short lived oxidant species which disinfects the item but leaves no toxic residue behind.… More

DIRECT OXIDATION OF HYDROCARBONS WITH A BIPOLAR METAL HYDRIDE FUEL CELL

Award Year / Program / Phase: 1989 / SBIR / Phase I
Agency: NSF
Principal Investigator: William M Ayers , Principal Investigator
Award Amount: $50,000.00
Abstract:
A novel method for the direct oxidation of hydrocarbon fuels for the production of electrical power in a fuel cell is presented. the method dissociates and dehydrogenates hydrocarbon fuels, such as methanol and formic acid. the system uses an electrostatic field on the dehydrogenation side to… More

POINT OF USE GENERATION OF GASES FOR OPTOELECTRONIC DEVICE FABRICATION

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr William M Ayers
Award Amount: $50,000.00

ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: William M Ayers , Principal Investigator
Award Amount: $53,143.00

ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: William M Ayers , Principal Investigator
Award Amount: $400,000.00
Abstract:
Phosphine (ph3) is a gas necessary for making compound semiconductors such as inp, inas(1-x)px, gap, and gaas(1-x)px as well as a dopant source for silicon. it is a very toxic gas with a tlv of 0.3 ppm. new regulations make the transport, storage, and handling of compressed gas cylinders of… More

Point Of Use Chlorine Gas Generator For Wafer Fabrication

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: William Ayers
Award Amount: $62,420.00
Abstract:
A point of use generator for chlorine gas production is proposed. The generator would provide ultrahigh purity chlorine which is necessary to enhance the growth rate and decrease the impurity level in silicon oxides for silicon device fabrication. The generator will also eliminate the need for… More

On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon Wafer Fabrication

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: William Ayers
Award Amount: $70,576.00
Abstract:
The fabrication of III-IV compound semiconductors, such as GaAs, and silicon semiconductors requires the use of the hydride gases phosphine and arsine. The accuracte sensing of the concentration of these gases is essential for high yield device fabrication. Presently the only methods for detecting… More

Point of Use Generation of Hydrogen Selenide for Electronic Device Fabrication

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: William Ayers
Award Amount: $59,853.00
Abstract:
A point of use generator for hydrogram selenide (H2Se) gas production is proposed. The generator would greatly decrease the safety risk of wafer fabrication with the toxic gas while providing higher purity gas than is now available for semiconductor fabrication. Anticipated Benefits: The H2Se… More

SBIR PHASE I: On-Site Silane Gas Generator for Semiconductor Manufacturing

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency: NSF
Principal Investigator: William Ayers
Award Amount: $75,000.00