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ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
15625
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
15625
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electron Transfer Tech
155 Campus Plaza Edison, NJ 08818
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1993
Title: ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $400,000.00
 

Abstract:

PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PPM. NEW REGULATIONS MAKE THE TRANSPORT, STORAGE, AND HANDLING OF COMPRESSED GAS CYLINDERS OF PHOSPHINE INCREASINGLY DIFFICULT. TO AVOID THESE PROBLEMS, WE ARE DEVELOPING A COMPACT POINT OF USE PHOSPHINE GENERATOR. THE GENERATOR WILL PRODUCE SEMICONDUCTOR GRADE PHOSPHINE ON DEMAND AT THE SEMICONDUCTOR FABRICATION FACILITY. THIS DEVELOPMENT WILL PROVIDE A MUCH SAFER SOURCE OF PHOSPHINE.

Principal Investigator:

William M Ayers
Principal Investigator
6099210070

Business Contact:

Small Business Information at Submission:

Electron Transfer Technologies
Po Box 160 Princeton, NJ 08542

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No