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On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon…

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
26696
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
26696
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Electron Transfer Tech
155 Campus Plaza Edison, NJ 08818
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon Wafer Fabrication
Agency / Branch: DOD / DARPA
Contract: N/A
Award Amount: $70,576.00
 

Abstract:

The fabrication of III-IV compound semiconductors, such as GaAs, and silicon semiconductors requires the use of the hydride gases phosphine and arsine. The accuracte sensing of the concentration of these gases is essential for high yield device fabrication. Presently the only methods for detecting these gase for on-line process control are very expensive sensor units. In Phase I of these project, we propose the investigation of several new sensing techniques to develop a low cost (

Principal Investigator:

William Ayers
6099210070

Business Contact:

Small Business Information at Submission:

Electron Transfer
P.o. Box 160 Princeton, NJ 08542

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No