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Company Information:

Company Name: EMCORE CORP.
City: Somerset
State: NJ
Zip+4: 08873
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (732) 271-9090

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,800,367.00 32
SBIR Phase II $4,755,403.00 11

Award List:

IN-SITU PROCESS MONITORING OF MOCVD BY PHOTOREFLECTANCE

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Peter norris
Award Amount: $49,995.00
Abstract:
Metal-organic chemical vapor deposition (mocvd) is a vapor-phase method of epitaxial growth which yields high-purity semiconductors. compositional and structural control have been achieved by utilizing process parameters/materials properties relationships derived from ex-situ materials… More

DEVELOPMENT OF DEVICE QUALITY SINGLE CRYSTAL THIN FILMS OF HIGH T(C) SUPERCONDUCTORS BY MOCVD

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Richard a stall
Award Amount: $49,994.00
Abstract:
Metal organic chemical vapor deposition (mocvd) is a vapor phase expitaxial technique which has been used to grow high purity semiconductors. the mocvd technique gives excellent control over composition and structure and surpasses molecular beam expitaxy in yield and throughput of material. emcore… More

MOCVD GROWN GAAS/ALGAAS AND GAAS/INGAAS STRUCTURES WITH APPLICATION TO HEMTS

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Peter norris
Award Amount: $49,994.00
Abstract:
Until recently, nearly all major work on hemts has been performed by mbe. within the last year, several japanese companies, after intensive research efforts, have begun to offer mocvd-growth hemt devices for sale. based on our experience and previous work in the growth and fabrication of mocvd… More

HYDROGEN RADICAL ASSISED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (HRAMOCVD) OF GAAS AND ALGAAS EXPITAXIAL LAYERS

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Richard Stall
Award Amount: $49,971.00

ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr Peter Norris
Award Amount: $49,995.00

HYDROGEN RADICAL ASSISED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (HRAMOCVD) OF GAAS AND ALGAAS EXPITAXIAL LAYERS

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Richard Stall
Award Amount: $406,767.00
Abstract:
Improved compositional control and enhancement of semiconductor and opto-electronic materials are necessary for the future development of devices which are dependent on complex ultra-structures. this investigation would directly examine the effects of hydrogen radicals on the growth and quality of… More

ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Dr Peter Norris
Award Amount: $765,000.00
Abstract:
Atomic layer epitaxy (ale) is a promising growth technique. the attractiveness of ale for future device and integrated circuit applications can be understood by considering several desirable attri-butes for epitaxial growth techniques. these include lower defect density, improved uniformity of… More

DEVELOPMENT OF A SUBSTITUTE FOR (HIGH TOXIC) ARSINE GAS FOR USE IN FABRICATION OF GALLIUM ARSENIDE

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Dr Peter Norris
Award Amount: $50,000.00
Abstract:
The use of arsine for the growth of gaas epitaxial layers by metalorganic chemical vapor deposition (mocvd) is coming under increasing scrutiny by government agencies and communities. the extreme toxicity of arsine gas, which must be stored in high-pressure steel cylinders, could lead to… More

"RESEARCH OF NOVEL II-VI SOLAR CELLS"

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency: NSF
Principal Investigator: Dr Gary S Tompa
Award Amount: $47,250.00
Abstract:
The epitaxial growth of novel ii-vi solar cell structures will be investigated. in phase i, the metal organic chemical vapor deposition (mocvd) process parameters and associated growth chemistries for an epitaxial p-i-n, znte/cdte/gaas, solar cell structure would be developed. the solar cell… More

DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION TECHNOLOGY

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr Gary S Tompa
Award Amount: $49,810.00
Abstract:
This proposal addresses the epitaxial growth of si/sige hbt devices. this will be accomplished using an ultrahigh vacuum epitaxial growth system combined with the development of an advanced, carrier gas based, vapor transport technique operating in the 10(-3) - 10(-6) torr range. the technique is… More

DEVELOPMENT OF GROWTH APPARATUS FOR THE MICROWAVE PLASMA-ASSISTED DEPOSITION OF DIAMOND-LIKE AND REFRACTORY THIN FILMS

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Peter E Norris
Award Amount: $49,989.00

METAL ORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF YTTRIUM BARIUM CARBON OXIDE ON LARGE AREA SUBSTRATES

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr Peter E Norris
Award Amount: $49,981.00

ALTERNATIVE ARSENIDE-SOURCES FOR II/V COMPOUND SEMICONDUCTOR DEVICE

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr Peter E Norris
Award Amount: $49,999.00

LOW TEMPERATURE FABRICATION OF HIGH TC SUPERCONDUCTING THIN FILMS BY PLASMA ENHANCED MOCVD PROCESS

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr Jing Zhao
Award Amount: $49,981.00

LOW TEMPERATURE FABRICATION OF HIGH TC SUPERCONDUCTING THIN FILMS BY PLASMA ENHANCED MOCVD PROCESS

Award Year / Program / Phase: 1991 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Dr Jing Zhao
Award Amount: $492,986.00
Abstract:
The technique of low temperature in situ formation of high tc superconducting thin films is crucial for early applications of copper oxide-based ceramic with superconductivity above liquid nitrogen temperature. such process will permit deposition of high quality, smooth surface and high density,… More

DEVELOPMENT OF GROWTH APPARATUS FOR THE MICROWAVE PLASMA-ASSISTED DEPOSITION OF DIAMOND-LIKE AND REFRACTORY THIN FILMS

Award Year / Program / Phase: 1991 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Peter E Norris
Award Amount: $498,011.00
Abstract:
The technique of low temperature formation of diamond-like and refractory thin films using plasma-assisted chemical vapor deposition (pa-cvd) is crucial for many dod applications. the development of such a process fill permit deposition of high quality, smooth surface and high denisty, refractory… More

IMPROVED PRECURSORS FOR THE METALORGANIC CVD OF YBCO THIN FILMS

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr Peter E Norris , Principal Investigator
Award Amount: $49,315.00
Abstract:
This program will develop suitable precursors, particularly for barium which exhibit increased volatility and stability in the metalorganic chemical vapor deposition (mocvd) process of htsc films by pyrolyzing organometallic precursors at the substrate surface. mocvd offers the advantages of… More

ADVANCED EPITAXY PROCESS TECHNOLOGY FOR WIDE BANDGAP DEVICES

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Gary S Tompa , Principal Investigator
Award Amount: $49,956.00
Abstract:
The research program uses a new advanced epitaxial growth technique, vapor transport epitaxy, to reliably and repeatedly fabricate a variety of compound semiconductors with high throughput and over large areas. the compounds of special interest in phase i are znse (direct bandgap 2.7 ev) and znte… More

DEVELOPMENT OF NOVEL WIDE BANDGAP BLUE LIGHT EMITTING DIODES

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Gary Tompa
Award Amount: $49,974.00
Abstract:
The epitaxial growth of high quality wide bandgap ii-vi heterostructures will be investigated. the recent demonstration of blue lasers in znse based materials has reinvigorated interest in the ii-vi wide bandgap materials as light emitters. it is envisioned that these materials will rapidly replace… More

Sequential Growth of Diamond Thin Films in a Rotating Disc Reactor

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Peter Norris, Phd
Award Amount: $49,942.00
Abstract:
Current difficulties in the growth of diamond thin films lie in their metastable characteristic and the requirements of non-equilibrium heteroepitaxial techniques for the single crystal growth. Sequential exposure of reactants using a microwave hydrogen plasma enhanced Atomic Layer Epitaxy (PE-ALE)… More

Atomic Layer Epitaxy of GaN in a Multi-Wafer Rotating Disc Reactor

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Heng Liu, Phd
Award Amount: $49,926.00

Atomic Layer Epitaxy of GaN in a Multi-Wafer Rotating Disc Reactor

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Heng Liu, Phd
Award Amount: $750,000.00
Abstract:
GaN and other III-V nitrides can be used for fabricating visible/UV optoelectronic devices. Sequential exposure of reactants using a commercial microwave Plasma Enhanced Atomic Layer Epitaxy reactor is proposed to grow high quality GaN films. The technique allows two dimensional layer-by-layer… More

Low-Temperature Fabrication of Barium-Strontium-Titania Films for Room-Temperature Infrared Detectors

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency: NASA
Principal Investigator: Chyi S. Chern
Award Amount: $49,930.00

MOCVD Growth and Characterization of Pseudomorphic HEHT's in a High Speed Rotating Disk Reactor

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr. Heng Liu
Award Amount: $53,030.00

Development of a Large Area, High Throughput, Automated MOCVD System Elizabeth Aven

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr. Gary S. Tompa
Award Amount: $61,863.00

Development of a Large Area, High Throughput, Automated MOCVD System Elizabeth Aven

Award Year / Program / Phase: 1994 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Dr. Gary S. Tompa
Award Amount: $300,000.00
Abstract:
III-V compound semiconductors are increasingly in demand for advanced electronic and optoelectronic applications. To keep abreast of the increasing demand for high speed devices, such as HEMTs or FETs, it is imperative for the III-V compound semi- conductor systems producers to make the transition… More

MOCVD Growth and Characterization of Pseudomorphic HEHT's in a High Speed Rotating Disk Reactor

Award Year / Program / Phase: 1994 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Dr. Heng Liu
Award Amount: $200,000.00
Abstract:
Until recently, nearly all of the major work on pseudomorphic HEMTs has been dominated by MBE technology. Low throughput is an inherent problem with MBE equipment. For this reason EMCORE proposes to use its low pressure, high speed, rotating disk MOCVD technology for the deposition of pseudomorphic… More

SiC SOI Compliant Substrate for SiC and III-V Nitrides

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. Chong Yuan
Award Amount: $99,999.00
Abstract:
The wide band-gap semiconductors SiC and III-V nitrides have been receiving greatly increased attention for high temperature and high power semiconductor devices, and for light emitting devices and laser applications at blue and UV wavelengths. Currently, one of the major hurdles in the development… More

MOCVD Growth of III-V Nitrides on SiC SOI Wafers in a Multi-Wafer Rotating Reactor

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Chong Yuan
Award Amount: $79,946.00
Abstract:
III-nitrides have been receiving greatly increased attention for potential laser applications at blue and ultraviolet wavelengths. (GaN, AIN, and InN or their alloys are the major candidates for these applications. Currently, one of the major hurdles in the development of this technology is the… More

GAN BASED HIGH TEMPERATURE ULTRAVIOLET PHOTODETECTORS

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency: NASA
Principal Investigator: Chong Yuan , Staff Scientist
Award Amount: $69,967.00

GaN LED UV Pumped Multi-Color & White Light Phosphors Using Innovative Immersion Techniques for Display Applications

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Robert Karlicek
Award Amount: $59,860.00
Abstract:
The use of UV LEDs for creating visible light by exciting commercially available phosphors will be explored. LEDs based on the (InAlGa)N materials system, now currently used to produce high brightness blue and green LEDs, will be developed to emit efficiently at UV wavelengths corresponding to the… More

Innovative Development of a Large Area SiC Growth System & Growth Process

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Zhe Chuan Feng/ian Fergus
Award Amount: $59,816.00
Abstract:
Silicon carbide (SiC) is an attractive material for use in high power and high temperature devices. Currently, there are significant challenges for the growth of large area epitaxial films of SiC. We are proposing to develop novel growth systems and growth processes for the large area growth of SiC.… More

The Innovative Development of Avalanche Photodetectors for UV Application

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ian Ferguson
Award Amount: $57,701.00
Abstract:
For many miltary applications, normal photoconductors and junction photodiodes are not sufficiently sensitive for detection of low incident light levels, therefore photodetector devices with optical gain are required. Large gains can be obtained in avalanche photodiodes (APD) with both low noise and… More

GAN BASED HIGH TEMPERATURE ULTRAVIOLET PHOTODETECTORS

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency: NASA
Principal Investigator: Chong Yuan , Staff Scientist
Award Amount: $591,640.00

Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Robert Karlicek
Award Amount: $64,835.00
Abstract:
A successful large area ELO GaN process technology will lead to a low cost 'virtual substrate' for LED and high performance III-N based devices. We propose to investigate the application of this technique in large area III-Nitride MOCVD reactors, up to 42x2 sapphire and… More

Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Ian Ferguson/Choung Tran
Award Amount: $69,967.00

Innovative Approach to Optimizing the Piezoelectric Effect for High Power GaN FETs

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ian Ferguson
Award Amount: $64,824.00

Epitaxial Growth of Silicon Carbide (SiC)

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Ian Ferguson
Award Amount: $97,570.00

N/A

Award Year / Program / Phase: 1999 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Ian Ferguson
Award Amount: $1,044.00

Improved Efficiency of Multicolor Light Emitting Devices Based on Short-Wavelength LEDs with Down-Converting Phosphors or Polymers

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Ian Ferguson
Award Amount: $449,955.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ferguson/Ramer, Dir. Res./Staff Scientist
Award Amount: $64,987.00

Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ferguson, Director
Award Amount: $0.00
Abstract:
It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Ferguson, Director
Award Amount: $300,000.00
Abstract:
It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4