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HYDROGEN RADICAL ASSISED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (HRAMOCVD) OF…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
8573
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
8573
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
EMCORE CORP.
394 Elizabeth Ave. Somerset, NJ 08873
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1990
Title: HYDROGEN RADICAL ASSISED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (HRAMOCVD) OF GAAS AND ALGAAS EXPITAXIAL LAYERS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $406,767.00
 

Abstract:

IMPROVED COMPOSITIONAL CONTROL AND ENHANCEMENT OF SEMICONDUCTOR AND OPTO-ELECTRONIC MATERIALS ARE NECESSARY FOR THE FUTURE DEVELOPMENT OF DEVICES WHICH ARE DEPENDENT ON COMPLEX ULTRA-STRUCTURES. THIS INVESTIGATION WOULD DIRECTLY EXAMINE THE EFFECTS OF HYDROGEN RADICALS ON THE GROWTH AND QUALITY OF DOPED AND UNDOPED GAAS AND ALGAAS. CARBON IMPURITIES ARE OFTEN A PROBLEM IN GAAS AND ALGAAS AND GIVE RISE TO P-TYPE MATERIAL. PRELIMINARY RESULTS AT EMCORE AND ELSEWHERE INDICATE THAT HRAMOCVD MAY IMPROVE MATERIAL PROPERTIES BY ELIMINATING CARBON IMPURITIES. THIS IS SUGGESTED BECAUSE P-TYPE MATERIAL IS CONVERTED TO N-TYPE WHEN A HYDROGEN PLASMA IS INTRODUCED. HYDROGEN RADICALS WILL BE PRODUCED UPSTREAM BY A MICROWAVE PLASMA SOURCE. PARTICULAR ATTENTION WILL BE PAID TO DISTINGUISHING BETWEEN PLASMA-GENERATED UV RADIATION GROWTH EFFECTS FROM HYDROGEN RADICAL EFFECTS. CHARACTERIZATION WOULD INCLUDE ROOM AND LOW TEMPERATURE PHOTOLUMINESCENCE (PL) AND HALL MEASUREMENTS. CHANGES IN GROWTH RATE WILL ALSO BE DOCUMENTED. PHASE I WOULD DEMONSTRATE THE EFFECTIVENESS OF THIS PROCESS ENHANCEMENT TECHNIQUE.

Principal Investigator:

Richard Stall
2017531311

Business Contact:

Small Business Information at Submission:

Emcore Corp.
35 Elizabeth Ave Somerset, NJ 08873

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No