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ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
8575
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
8575
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
EMCORE CORP.
394 Elizabeth Ave. Somerset, NJ 08873
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1990
Title: ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $765,000.00
 

Abstract:

ATOMIC LAYER EPITAXY (ALE) IS A PROMISING GROWTH TECHNIQUE. THE ATTRACTIVENESS OF ALE FOR FUTURE DEVICE AND INTEGRATED CIRCUIT APPLICATIONS CAN BE UNDERSTOOD BY CONSIDERING SEVERAL DESIRABLE ATTRI-BUTES FOR EPITAXIAL GROWTH TECHNIQUES. THESE INCLUDE LOWER DEFECT DENSITY, IMPROVED UNIFORMITY OF THICKNESS AND DOPING, IMPROVED THICKNESS CONTROL, AND THE POSSIBILITY OF CONFORMAL EPITAXY. A MAJOR PROBLEM WITH PRESENT ALE METHODS IS LOW GROWTH RATE, WHICH IS SUBSTANTIALLY LESS THAN A MONOLAYER PER SECOND. THE FEASIBILITY IS BEINGDEMONSTRATED OF ALE GROWTH OF GALLIUM-ARSENIDE IN A ROTATING DISK GEO-METRY METALORGAIC CHEMICAL VAPOR DEPOSITION (MOCVD) REACTOR. THE PRO-PORTIONALITY OF GROWTH RATE TO ROTATION RATE IS BEING DEMONSTRATED. IT IS ANTICIPATED THAT THIS WOULD ALLOW THE FABRICATION OF STRUCTURES WHICH REQUIRE BOTH HIGH AND LOW GROWTH RATES IN A SINGLE SYSTEM WITHOUT MAJOR PERTURBATIONS DURING GROWTH. THIS IS PARTICULARLY IMPORTANTFOR STRUCTURES WHERE ABRUPT INTERFACES ARE NECESSARY AND YET HAVE SUBSTANTIAL TOTAL EPITAXIAL THICKNESS. THE DEMONSTRATION OF A SIGNIFICANT ENHANCED GROWTH RATE IS A REQUIREMENT FOR THE DEVELOPMENT OF PRACTICAL ALE-BASED MATERIALS AND DEVICE TECHNOLOGIES. SUCCESSFUL DEVELOPMENT OF THE TECHNIQUES FOR REPRODUCIBLE GROWING DEVICE-QUALITY GALLIUM-ARSENIDE BY ALE WOULD HAVE MAJOR IMPLICATIONS FOR A BROAD RANGE OF DEVICE APPLICATIONS INCLUDING SENSORS, HIGH-SPEED ELECTRONIC DEVICES AND INTEGRATED CIRCUIT DEVELOPMENT.

Principal Investigator:

Dr Peter Norris
2017531311

Business Contact:

Small Business Information at Submission:

Emcore Corp.
35 Elizabeth Ave Somerset, NJ 08873

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No