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DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
12453
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
12453
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
EMCORE CORP.
394 Elizabeth Ave. Somerset, NJ 08873
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1990
Title: DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION TECHNOLOGY
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $49,810.00
 

Abstract:

THIS PROPOSAL ADDRESSES THE EPITAXIAL GROWTH OF SI/SIGE HBT DEVICES. THIS WILL BE ACCOMPLISHED USING AN ULTRAHIGH VACUUM EPITAXIAL GROWTH SYSTEM COMBINED WITH THE DEVELOPMENT OF AN ADVANCED, CARRIER GAS BASED, VAPOR TRANSPORT TECHNIQUE OPERATING IN THE 10(-3) - 10(-6) TORR RANGE. THE TECHNIQUE IS CALLED VAPOR TRANSPORT EPITAXY (VTE). GROUP IV MATERIALS SUCH AS SI/SIGE ARE OF PARTICULAR INTEREST, SINCE THEY PROMISE TO BE THE NEXT GENERATION IN HIGH SPEED SI BASED DEVICES. IN PHASE I, THE GROWTH AND MATERIALS CHARACTERISTICS OF SI/SIGE STRUCTURES WOULD BE DETERMINED. IN PHASE II DOPING TECHNIQUES WOULD BE ESTABLISHED AND FUNCTIONAL DEVICES WOULD BE FABRICATED AND CHARACTERIZED. ALSO IN PHASE II FET STRUCTURES WILL BE INVESTIGATED. ???????????

Principal Investigator:

Dr Gary S Tompa
2012719090

Business Contact:

Small Business Information at Submission:

Emcore Corp
35 Elizabeth Ave Somerset, NJ 08873

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No