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ADVANCED EPITAXY PROCESS TECHNOLOGY FOR WIDE BANDGAP DEVICES

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
15626
Program Year/Program:
1991 / SBIR
Agency Tracking Number:
15626
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
EMCORE CORP.
394 Elizabeth Ave. Somerset, NJ 08873
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1991
Title: ADVANCED EPITAXY PROCESS TECHNOLOGY FOR WIDE BANDGAP DEVICES
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $49,956.00
 

Abstract:

THE RESEARCH PROGRAM USES A NEW ADVANCED EPITAXIAL GROWTH TECHNIQUE, VAPOR TRANSPORT EPITAXY, TO RELIABLY AND REPEATEDLY FABRICATE A VARIETY OF COMPOUND SEMICONDUCTORS WITH HIGH THROUGHPUT AND OVER LARGE AREAS. THE COMPOUNDS OF SPECIAL INTEREST IN PHASE I ARE ZNSE (DIRECT BANDGAP 2.7 EV) AND ZNTE (DIRECT BANDGAP 2.3 EV), BECAUSE OF THEIR WIDE BANDGAP IN THE BLUE/BLUE-GREEN PORTION OF THE VISIBLE SPECTRUM. THEIR POTENTIAL APPLICATION IN OPTICAL STORAGE DEVIDES, MULTIJUNCTION SOLAR CELLS, FLAT PANEL DISPLAYS, VISIBLE HOLOGRAPHY, POLYMER FIBER COMMUNICATIONS, UNDERWATER COMMUNICATIONS, RADIATION SENSORS, AND BLUE LIGHT EMITTERS MAKE THEM STRATEGICALLY IMPORTANT MATERIALS. THEIR WIDE BANDGPAS, LARGE RANGE OF LATTICE PARAMETERS, AND DIELECTRIC CONSTANTS ALSO SUGGEST APPLICATIONS AS EPITAXIAL PASSIVATION LAYERS FOR NUMEROUS III-IV COMPOUNDS (WHICH DO NOT POSSESS HIGH QUALITY NATIVE OXIDES), FOR USE AS INSULATING LAYERS, OR FOR APPROPRIATE BARRIER LAYERS FOR III-IV MULTIPLE QUANTUM WELLS.

Principal Investigator:

Gary S Tompa
Principal Investigator
9082719090

Business Contact:

Small Business Information at Submission:

Emcore Corpon
35 Elizabeth Avenue Somerset, NJ 08873

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No