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SBIR Phase I:Development of Dual-Tone Photoresist

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 1013091
Agency Tracking Number: 1013091
Amount: $143,832.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: NM
Solicitation Number: NSF 09-609
Timeline
Solicitation Year: 2010
Award Year: 2010
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
5013B S Providence Rd
Columbia, MO 65203
United States
DUNS: 832615939
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Sam Sun
 MS
 (573) 201-1617
 ssun@suntificmaterials.com
Business Contact
 Sam Sun
Title: MS
Phone: (573) 201-1617
Email: ssun@suntificmaterials.com
Research Institution
N/A
Abstract

This Small Business Innovation Research (SBIR) Phase I project aims to develop a new photoresist material with dual tones for micro-photolithography. Traditional photoresist material responds to radiations in either positive or negative tone respectively. In this project, a dual-tone photoresist material that responds to radiations in positive and negative tone simultaneously will be investigated. The concept is that the photoresist is only soluble in developer when halfway radiated, resulting in split or doubled patterns.
The broader/commercial impact of this project will be the potential to provide a cost-effective photoresist technology for enhanced resolution of micro-photolithography. Currently, the Argon Fluoride (ArF) photolithography has already reached its resolution limit. The double-patterning (DP) process offers higher resolution, but is generally complex and costly. The dual-tone technology is expected to extend ArF lithography to the resolution level of Extreme Ultraviolet (EUV) lithography with lower cost than that of the DP process.

* Information listed above is at the time of submission. *

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