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Application of Thin Film Thermoelectrics

Award Information
Agency: Department of Defense
Branch: Army
Contract: N/A
Agency Tracking Number: 20698
Amount: $500,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1995
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1675 West Maple Road
Troy, MI 48084
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Krishna Sapru
 (313) 280-1900
Business Contact
Phone: () -
Research Institution
N/A
Abstract

The objective of this program is to develop a thin/thick film materials deposition process technology which will reliably provide high quality materials for constructing Peltier thermo-elements with a high figure of merit over the temperature range of 250-350 Deg K. The study will focus on the materials system consisting of (B1, Sb)2(Te, Se)3 alloys for both p- and n-type thermo-elements. Literature shows that specific compositions in this alloy system have provided high figures of merit (3.2 - 3.4 x IO-3/Deg K at 3OOK) with a maximum Peltier cooling of 77 Deg K. Recently investigators at the University of Virginia reported a high figure of merit of 3.7 x 10-3/K for p- type (Bi, Sb)2(Te, Sb)3 alloy. The process selected for depositing the films in the proposed program will be a unique, high rate Microwave Enhanced CVO process (MECVD) developed at Energy Conversion Devices, Inc. ECD has achieved deposition rates as high as 3OO Deg. A/sec for amorphous Si-H alloys using this technique, and this process has been developed for depostion on large area surfaces. Large area thin/thick film thermoelectric modules will be attractive for applications which require heating/cooling ability in a single, light-weight module.

* Information listed above is at the time of submission. *

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