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High-Voltage-Discharge Self-Destruct Mechanisms

Award Information
Agency: Department of Defense
Branch: Army
Contract: W31P4Q-08-C-0276
Agency Tracking Number: O053-A12-2052
Amount: $749,249.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: OSD05-A12
Solicitation Number: 2005.3
Timeline
Solicitation Year: 2005
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-07-14
Award End Date (Contract End Date): 2010-07-30
Small Business Information
14817 Silverstone Drive
Silver Spring, MD 20905
United States
DUNS: 160366659
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrew Mostovych
 President
 (301) 388-3838
 amost@enterprisesciences.com
Business Contact
 Marta Mostovych
Title: VP & CFO
Phone: (301) 388-3838
Email: mmost@enterprisesciences.com
Research Institution
N/A
Abstract

This proposal presents a plan for developing and perfecting new high-voltage technology capable of permanently destroying the functionality, the residual data remanence, and internal structure of semiconductor memory, semiconductor processors, and many other micro-devices that may contain secured information that must be protected from unauthorized tampering. The envisioned technology can be implemented on the semiconductor die, IC chip, pc-board, or device platform level equally effectively with components specifically customized for this technology or retrofitted at a later stage in their incorporation into secure systems. The proposed effort will: conduct basic R&D to perfect and optimize the technology; pursue advanced fabrication development to increase the capabilities of the technology and make the technology amenable to large scale production; and produce advanced prototypes to test and demonstrate the technology in real anti-tamper system applications.

* Information listed above is at the time of submission. *

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