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Company Information:

Company Name:
Privatran
Address:
1250 Capital of Texas Highway South
Building 3, Suite 400
Austin, TX 78746-
Phone:
N/A
URL:
EIN:
611516233
DUNS:
788622012
Number of Employees:
8
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $639,036.00 6
SBIR Phase II $2,390,682.00 4
STTR Phase I $199,953.00 2

Award List:

Nanoscale Conformable Thermal Interface Materials with Electronically Enhanced Heat Conduction

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$99,956.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Koneru Ramakrishna, Principal Investigator
Research Institution:
Stanford University
RI Contact:
Kenneth E. Goodson
Abstract:
Carbon nanotubes (CNTs), single and multi-walled, have very high thermal conductivity and are natural choices to increase teffective thermal conductivity of thermal interface materials (TIMs). However, they have high interfacial thermal resistances of CNT at the base (seed) and at the heat sink end.… More

Advanced Memristor Materials and 3D Integration Architectures

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$99,997.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Burt Fowler, Principal Investigator
Research Institution:
Rice University
RI Contact:
James M. Tour
Abstract:
PrivaTran proposes the use of newly-developed manufacturing methods that convert materials commonly found in conventional integrated circuit (IC) manufacturing into memristor devices with increased packing density and an advanced, three-dimensional (3D) architecture. The memristor devices can be… More

Multi Band SAL Seeker Read Out Integrated Circuit (ROIC)

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$69,992.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Burt Fowler, Principal Investigator
Abstract:
PrivaTran proposes to develop a semi-active laser (SAL) receiver read-out integrated circuit (ROIC) which, when integrated with a government furnished equipment (GFE) sensor array, will provide an advanced dual-band SAL receiver system. Systems with 16x16 detector elements coupled with the PrivaTran… More

3D Memristor Architectures for Software Defined Radio

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$69,108.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Burt Fowler, Principal Investigator
Abstract:
PrivaTran proposes the use of newly-developed manufacturing methods that convert materials commonly found in conventional integrated circuit (IC) manufacturing into memristor devices with increased packing density and an advanced, three-dimensional (3D) architecture. The memristor devices can be… More

SBIR Phase I:Massively Dense 3D Integrated Memory

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$149,996.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project will further develop a two-terminal, electronically-programmable, nonvolatile memory array using materials commonly found in integrated circuit (IC) manufacturing. Each element is smaller than a single transistor and is formed using standard IC… More

SBIR Phase II: Massively Dense 3D Integrated Memory

Award Year / Program / Phase:
2011 / SBIR / Phase II
Award Amount:
$390,810.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase II project will further develop a two-terminal, electronically-programmable, nonvolatile memory array using materials commonly found in integrated circuit (IC) manufacturing. Each element is smaller than a single transistor and is formed using… More

Embedded 3D Nonvolatile Memory

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,994.00
Agency:
NASA
Principal Investigator:
Burt Fowler, Principal Investigator
Abstract:
Integrated circuits in NASA spacecraft and vehicle electronics must operate over large temperature extremes and mitigate radiation effects that can result in upset and/or destruction of devices. PrivaTran has previously demonstrated a two-terminal, electronically-programmable resistor as a… More

Wavefront/ Wavefunction Sensor for 3D Imaging

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,983.00
Agency:
DOD
Principal Investigator:
Burt Fowler, Principal Investigator – (512) 431-8460
Abstract:
PrivaTran proposes to develop a Wavefront/ Wavefunction Sensor 3D Imaging high resolution SCA (Sensor Chip Assembly) for use in coherent 3D imaging of long range targets for Space Situation Awareness (SSA) through turbulent atmosphere. The Wavefront/ Wavefunction Sensor will be composed of a sensor… More

3D Memristor Architectures for Software Defined Radio

Award Year / Program / Phase:
2011 / SBIR / Phase II
Award Amount:
$749,956.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Burt Fowler, Principal Investigator – (512) 431-8460
Abstract:
PrivaTran proposes the use of newly-developed manufacturing methods that convert materials commonly found in conventional integrated circuit (IC) manufacturing into memristor devices with increased packing density and an advanced, three-dimensional (3D) architecture. The memristor devices can be… More

Low-Cost Radiation-Hard Nonvolatile Random-Access Memory

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,963.00
Agency:
DOD
Principal Investigator:
Burt Fowler, Principal Investigator – (512) 431-8460
Abstract:
ABSTRACT: PrivaTran will measure the radiation tolerance of new memristive materials and will design, model and simulate advanced memristor-based architectures for nonvolatile random access memory (RAM). The requirements for proper memory element isolation, programming voltage drive and current… More

Low-Cost Radiation-Hard Nonvolatile Random-Access Memory

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$750,000.00
Agency:
DOD
Principal Investigator:
Burt Fowler, CTO – (512) 431-8460
Abstract:
ABSTRACT: PrivaTran will measure the radiation tolerance of new resistive memory materials and will design and fabricate advanced memristor-based architectures for nonvolatile random access memory (RAM) applications that are suitable for aerospace systems. The requirements for proper memory element… More

Multi Band SAL Seeker Read Out Integrated Circuit (ROIC)

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$499,916.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Burt Fowler, Principal Investigator – (512) 431-8460
Abstract:
PrivaTran proposes to develop a semi-active laser (SAL) receiver read-out integrated circuit (ROIC) with interface to government furnished equipment (GFE) sensor arrays for advanced dual-band SAL receiver systems. Large-area focal plane array (FPA) technology and the PrivaTran ROIC provide high… More