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In-situ p-type doping activation near the MBE growth temperature of HgCdTe for…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
55187
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
001NM-3054
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
EPIR Technologies Inc
590 Territorial Drive, Suite B Bolingbrook, IL -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2001
Title: In-situ p-type doping activation near the MBE growth temperature of HgCdTe for advanced LWIR detectors
Agency / Branch: DOD / USAF
Contract: F29601-01-C-0031
Award Amount: $749,583.00
 

Abstract:

High-performance HgCdTe infrared focal plane arrays (IRFPAs) sensing in the long-wavelength infrared (LWIR) region and advanced structures such as multi-color detectors required for future generation IRFPAs are highly desirable for various Air Forceapplications. Such device architectures require not only reliable extrinsic n- and p-type doping of HgCdTe but also the precise control of composition and doping profiles. This can be best achieved using Molecular Beam Epitaxy (MBE) within a single growthrun for a specific architecture. Although n-type doping with indium is well under control in MBE-HgCdTe, the situation concerning p-type doping with arsenic, which is the most suitable acceptor, is not satisfactory. In current technology, a hightemperature anneal above 400¿C is necessary to activate the arsenic species into acceptors. It is mandatory to develop a viable, reproducible and effective p-doping approach that does not involve thermal treatments above 250¿C in order to preserve thecompositional and doping profile integrity of HgCdTe-based structures. In Phase I, we demonstrated that in-situ As-doped MWIR HgCdTe can be p-type activated after a thermal anneal at 250¿C through a proprietary two-step process. In Phase II, we propose tooptimize this process by a precise control of arsenic incorporation and site transfer. The assessment of success will be established through the device processing and testing of p/n and n/p heterostructures with the goal of exceeding the reportedperformance of LWIR ion implanted structures.

Principal Investigator:

Paul Boieriu (P. I.)
Engineer
6307710203
paulepir@epir.com

Business Contact:

Jean-Pierre Faurie
Vice-President
6307710203
jpfaurie@epir.com
Small Business Information at Submission:

EPIR, LTD.
590 Territorial Drive, Suite B, Suite B Bolingbrook, IL 60440

EIN/Tax ID: 363623449
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No