High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

Award Information

Agency: Department of Defense	Branch: Army	Award ID: 73616	Program Year/Program: 2005 / SBIR
Agency Tracking Number: A043-119-1869	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: EPIR Technologies Inc
590 Territorial Drive, Suite B Bolingbrook, IL -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2005

Title: High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

Agency / Branch: DOD / ARMY

Contract: W15P7T-05-C-H201

Award Amount: $119,925.00

Abstract:
It is critical in the field on infrared imaging to reduce array costs and simultaneously improve their performance. We propose to achieve both. The use of long wavelength infrared HgCdTe grown on Si substrates will reduce the array costs, increase its mechanical strength and permit the fabrication of larger area arrays than present-day technology based on bulk CdZnTe substrates. Performance enhancements result from the passivation of defects created by the lattice mismatch between HgCdTe and Si. We will develop a reliable method to passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. The success of this program will be demonstrated by the fabrication of high performance long-wavelength infrared detectors on Si substrates.

Principal Investigator:
Paul Boieriu
Senior Engineer
6307710203
pboieriu@epir.com

Business Contact:
Sivalingam Sivananthan
President
6307710201
siva@epir.com

Small Business Information at Submission:

EPIR TECHNOLOGIES, INC.
590 Territorial Drive, Suite B Bolingbrook, IL 60440

EIN/Tax ID: 364196918

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No