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EPITAXIAL LABORATORY INC
UEI: L7N9HWUSKKX8
# of Employees: 6
HUBZone Owned: No
Socially and Economically Disadvantaged: Yes
Woman Owned: No
Award Charts
Award Listing
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Development of Integrated Infrared Focal Plane Arrays on Si
Amount: $150,000.00This proposal describes the development of a process to synthesize thick (>500 nm) GeSn materials on a template to be used to fabricate monolithically integrated FPAs (with CMOS ROICs) on Si with lo ...
STTRPhase I2023Department of Defense Air Force -
Monolithic Integrated High performance SiGeSn Imaging Sensor
Amount: $250,000.00This proposal describes development of a scalable processes compatible with standard CMOS BEOL processes for fabrication of monolithically integrated image sensors operating between 2 and 5 microns. I ...
STTRPhase I2023Department of Defense Office of the Secretary of Defense -
Dual Band Avalanche Photodiode (APDs) Detectors and Integration Schemes
Amount: $50,000.00This proposal describes the development of GeSn based dual band APDs and CMOS integrated APD arrays operating between 2-3 microns and 3-5 microns wavelength bands. In phase I, we will find, through mo ...
STTRPhase I2021Department of Defense Air Force -
Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices
Amount: $750,000.00latereThis proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget la ...
STTRPhase II2018Department of Defense Air Force -
Green Diode Lasers (480-550 nm Spectral Regime)
Amount: $150,000.00Despite their broad applications, up to date, diode pumped solid state green lasers are almost exclusively dominate the market due to the lack of low defect or defect-free semiconductor materials with ...
STTRPhase I2016Department of Defense Army -
Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect
Amount: $150,000.00This proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget excimer ...
STTRPhase I2016Department of Defense Air Force -
High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range
Amount: $149,950.00This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II m ...
STTRPhase I2012Department of Defense Navy -
Ultra High Efficiency Multi Junction Solar Cells for Space Applications
Amount: $100,000.00Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can red ...
SBIRPhase I2010Department of Defense Air Force -
High Efficiency Flexible Thin Multi-Junction Solar Cells
Amount: $742,329.00ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improve ...
SBIRPhase II2010Department of Defense Air Force -
High Efficiency Flexible Thin Multi-Junction Solar Cells
Amount: $100,000.00ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficien ...
SBIRPhase I2009Department of Defense Air Force