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EPITAXIAL LABORATORY INC

Company Information
Address
25 TIANA PL
DIX HILLS, NY 11746-5215
United States



Information

UEI: L7N9HWUSKKX8

# of Employees: 6


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: Yes

Woman Owned: No



Award Charts




Award Listing

  1. Development of Integrated Infrared Focal Plane Arrays on Si

    Amount: $150,000.00

    This proposal describes the development of a process to synthesize  thick (>500 nm) GeSn materials on a template to be used to fabricate monolithically integrated FPAs (with CMOS ROICs) on Si with lo ...

    STTRPhase I2023Department of Defense Air Force
  2. Monolithic Integrated High performance SiGeSn Imaging Sensor    

    Amount: $250,000.00

    This proposal describes development of a scalable processes compatible with standard CMOS BEOL processes for fabrication of monolithically integrated image sensors operating between 2 and 5 microns. I ...

    STTRPhase I2023Department of Defense Office of the Secretary of Defense
  3. Dual Band Avalanche Photodiode (APDs) Detectors and Integration Schemes

    Amount: $50,000.00

    This proposal describes the development of GeSn based dual band APDs and CMOS integrated APD arrays operating between 2-3 microns and 3-5 microns wavelength bands. In phase I, we will find, through mo ...

    STTRPhase I2021Department of Defense Air Force
  4. Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices

    Amount: $750,000.00

    latereThis proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget la ...

    STTRPhase II2018Department of Defense Air Force
  5. Green Diode Lasers (480-550 nm Spectral Regime)

    Amount: $150,000.00

    Despite their broad applications, up to date, diode pumped solid state green lasers are almost exclusively dominate the market due to the lack of low defect or defect-free semiconductor materials with ...

    STTRPhase I2016Department of Defense Army
  6. Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect

    Amount: $150,000.00

    This proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget excimer ...

    STTRPhase I2016Department of Defense Air Force
  7. High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

    Amount: $149,950.00

    This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II m ...

    STTRPhase I2012Department of Defense Navy
  8. Ultra High Efficiency Multi Junction Solar Cells for Space Applications

    Amount: $100,000.00

    Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can red ...

    SBIRPhase I2010Department of Defense Air Force
  9. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $742,329.00

    ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improve ...

    SBIRPhase II2010Department of Defense Air Force
  10. High Efficiency Flexible Thin Multi-Junction Solar Cells

    Amount: $100,000.00

    ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficien ...

    SBIRPhase I2009Department of Defense Air Force
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