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Company Information:

Company Name:
EPITAXIAL LABORATORY, INC.
Address:
25 Tiana Place
Dix Hills, NY 11746-5215
Phone:
(516) 508-0060
URL:
N/A
EIN:
223304210
DUNS:
877211664
Number of Employees:
6
Woman-Owned?:
No
Minority-Owned?:
Yes
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $769,415.00 10
SBIR Phase II $1,342,290.00 2
STTR Phase I $149,950.00 1

Award List:

Single-Mode Semiconductor Laser Utilizing Field Interference Effects For 2-5 Micron

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$70,000.00
Agency:
NASA
Principal Investigator:
Jie Piao , President
Abstract:
N/a

Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jie Piao
Abstract:
The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to… More

New Materials For High Performance Sensors Operating Entire Ir Spectrum

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$70,000.00
Agency:
NASA
Principal Investigator:
Jie Piao , PRESIDENT
Abstract:
N/a

High Performance 2.5 Micron InGaAs/InP TPV Cells Based on Novel Buffer Technology

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
W.-y. Hwang
Abstract:
Due to a mature material growth and processing technology of InP and InGaAs, lattice-mismatched 2.5 um(0.55 ev )InGaAs/InP is identified as the most promising Thermophotovoltaic(TPV) material system for the next generation of monolithic interconnected modules(MIMs). Compared to GaSb and quaternary… More

New Materials For High Performance Sensors Operating Entire Ir Spectrum

Award Year / Program / Phase:
1998 / SBIR / Phase II
Award Amount:
$599,961.00
Agency:
NASA
Principal Investigator:
Jie Piao , PRESIDENT
Abstract:
N/a

Novel TlGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$69,420.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jie Piao
Abstract:
N/a

A Novel Buffer Layer Approach to Epitaxy of InSb on Si for HgCdTe Focal Plane Array Application

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jie Piao
Abstract:
N/a

Development of TlGaAs/GaAs materials for High Speed Electronic Devices

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$69,995.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Jie Piao, President
Abstract:
High-performance, low cost monolithic radio-frequency integrated circuits (RFIC) have many applications for ARMY, other DOD components, and commercial site. The need for RFIC operating in the high mm-wave range stresses the current GaAs based PHEMTtechnology to its limits, and has spurred… More

Thin Multijunction Solar Cells

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Jie Piao, President
Abstract:
As future demands are made for higher efficiency (30+ %), improved Watt/weight (1000 W/kg), it is clear that new approach that combine best attribute of crystalline and thin film solar cells to achieve 1000 W/kg is needed. ELI propose to develop (1) Inverted structure of InGaP (1.8 ev)/GaAs (1.4… More

High Efficiency Flexible Thin Multi-Junction Solar Cells

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Jie Piao, Director of Network Engin
Abstract:
ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improved Watt/weight, Watt/area, Watt/cost, it is clear that the current approaches should be… More

Ultra High Efficiency Multi Junction Solar Cells for Space Applications

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Jie Piao, President
Abstract:
Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can reduce the mass, area, stowed volume and the cost of the solar arrays. ELI propose to develop Ultra… More

High Efficiency Flexible Thin Multi-Junction Solar Cells

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$742,329.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Jie Piao, President
Abstract:
ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improved Watt/weight, Watt/area, Watt/cost, it is clear that the current approaches should be improved to… More

High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

Award Year / Program / Phase:
2012 / STTR / Phase I
Award Amount:
$149,950.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Jie Piao, President – (516) 508-0060
Research Institution:
Princeton University
RI Contact:
Joseph X. Montemarano
Abstract:
This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II molecular beam epitaxy (MBE) system. Due to their bi-polar nature and the exponentially increasing… More