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Company Information:

Company Name: EPITAXIAL LABORATORY, INC.
City: Dix Hills
State: NY
Zip+4: 11746-5215
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
Website URL: N/A
Phone: (516) 508-0060

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $769,415.00 10
SBIR Phase II $1,342,290.00 2
STTR Phase I $149,950.00 1

Award List:

Single-Mode Semiconductor Laser Utilizing Field Interference Effects For 2-5 Micron

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jie Piao , President
Award Amount: $70,000.00

Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jie Piao
Award Amount: $60,000.00
Abstract:
The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to… More

New Materials For High Performance Sensors Operating Entire Ir Spectrum

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jie Piao , PRESIDENT
Award Amount: $70,000.00

High Performance 2.5 Micron InGaAs/InP TPV Cells Based on Novel Buffer Technology

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: W.-y. Hwang
Award Amount: $65,000.00
Abstract:
Due to a mature material growth and processing technology of InP and InGaAs, lattice-mismatched 2.5 um(0.55 ev )InGaAs/InP is identified as the most promising Thermophotovoltaic(TPV) material system for the next generation of monolithic interconnected modules(MIMs). Compared to GaSb and quaternary… More

New Materials For High Performance Sensors Operating Entire Ir Spectrum

Award Year / Program / Phase: 1998 / SBIR / Phase II
Agency: NASA
Principal Investigator: Jie Piao , PRESIDENT
Award Amount: $599,961.00

Novel TlGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jie Piao
Award Amount: $69,420.00

A Novel Buffer Layer Approach to Epitaxy of InSb on Si for HgCdTe Focal Plane Array Application

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jie Piao
Award Amount: $65,000.00

Development of TlGaAs/GaAs materials for High Speed Electronic Devices

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jie Piao, President
Award Amount: $69,995.00
Abstract:
High-performance, low cost monolithic radio-frequency integrated circuits (RFIC) have many applications for ARMY, other DOD components, and commercial site. The need for RFIC operating in the high mm-wave range stresses the current GaAs based PHEMTtechnology to its limits, and has spurred… More

Thin Multijunction Solar Cells

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Jie Piao, President
Award Amount: $100,000.00
Abstract:
As future demands are made for higher efficiency (30+ %), improved Watt/weight (1000 W/kg), it is clear that new approach that combine best attribute of crystalline and thin film solar cells to achieve 1000 W/kg is needed. ELI propose to develop (1) Inverted structure of InGaP (1.8 ev)/GaAs (1.4… More

High Efficiency Flexible Thin Multi-Junction Solar Cells

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Jie Piao, Director of Network Engin
Award Amount: $100,000.00
Abstract:
ELI has recently produced ~16% AM0 efficiency crack-free flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improved Watt/weight, Watt/area, Watt/cost, it is clear that the current approaches should be… More

Ultra High Efficiency Multi Junction Solar Cells for Space Applications

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Jie Piao, President
Award Amount: $100,000.00
Abstract:
Anticipated future space-based mission capabilities will include high-powered platforms supporting high-bandwidth communication. To supply power to these missions higher efficiency solar cells can reduce the mass, area, stowed volume and the cost of the solar arrays. ELI propose to develop Ultra… More

High Efficiency Flexible Thin Multi-Junction Solar Cells

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Jie Piao, President
Award Amount: $742,329.00
Abstract:
ELI has recently produced ~16% AM0 efficiency flexible solar cells. We also developed over 25% AM0 efficiency thin film solar cell technology. As future demands are made for higher efficiency, improved Watt/weight, Watt/area, Watt/cost, it is clear that the current approaches should be improved to… More

High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

Award Year / Program / Phase: 2012 / STTR / Phase I
Agency / Branch: DOD / NAVY
Research Institution: Princeton University
Principal Investigator: Jie Piao, President – (516) 508-0060
Award Amount: $149,950.00
RI Contact: Joseph X. Montemarano
Abstract:
This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II molecular beam epitaxy (MBE) system. Due to their bi-polar nature and the exponentially increasing… More