Linear Antimony-based HFETs for Microwave and Millimeter Wave Applications
Agency / Branch:
DOD / MDA
Epitaxial Technologies proposes to develop novel material and device tech, nologies using antimony-based active channels for highly linear microwave devices that can be used to simultaneously produce low noise and high power. To do this, we will perform materials and device design to determine suitable material structures and epitaxial growth processes. The main goal of this proposed Phase I effort is to demonstrate the feasibility of ultra high linearity HFETs by developing techniques for growing antimony based heterostructures using Molecular Beam Epitaxy (MBE) and demonstrating through material and device design the performance enhancements and cost reductions that can be expected from ultra linear HFET MMICs. In Phase II of the proposed project, we will further optimize the material structures and design and fabricate HFETs with higher output power and IP3, and lower noise performance than currently available FETs.
Small Business Information at Submission:
Principal Investigator:Dr. Olaleye Aina
EPITAXIAL TECHNOLOGIES, LLC.
1450 South Rolling Road Baltimore, MD 21227
Number of Employees: