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Linear Antimony-based HFETs for Microwave and Millimeter Wave Applications

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
41230
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
41230
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Epitaxial Technologies, LLC
1450 South Rolling Road Baltimore, MD -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1998
Title: Linear Antimony-based HFETs for Microwave and Millimeter Wave Applications
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $64,044.00
 

Abstract:

Epitaxial Technologies proposes to develop novel material and device tech, nologies using antimony-based active channels for highly linear microwave devices that can be used to simultaneously produce low noise and high power. To do this, we will perform materials and device design to determine suitable material structures and epitaxial growth processes. The main goal of this proposed Phase I effort is to demonstrate the feasibility of ultra high linearity HFETs by developing techniques for growing antimony based heterostructures using Molecular Beam Epitaxy (MBE) and demonstrating through material and device design the performance enhancements and cost reductions that can be expected from ultra linear HFET MMICs. In Phase II of the proposed project, we will further optimize the material structures and design and fabricate HFETs with higher output power and IP3, and lower noise performance than currently available FETs.

Principal Investigator:

Dr. Olaleye Aina
4104555594

Business Contact:


0
Small Business Information at Submission:

EPITAXIAL TECHNOLOGIES, LLC.
1450 South Rolling Road Baltimore, MD 21227

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No