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Company Information:

Company Name:
Eti Instrument Systems Inc.
Address:
1317 Webster Ave
Fort Collins, CO 80524
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
N/A
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $670,560.00 14
SBIR Phase II $2,375,931.00 6

Award List:

INNOVATIVE GROWTH TECHNIQUE FOR INFRARED DETECTORS: ATOMIC LAYER EPITAXY

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,715.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr v s ban
Abstract:
We propose to develop an atomic layer epitaxy (ale) technique whereby the crystal growth of single atomic layers will be applied to the fabrication of infrared detector arrays with extremely high uniformity in the 0.5 to 3 micron spectral range. the use of layer growth eliminates thickness and… More

"A SIMPLE HIGH PERFORMANCE AVALANCHE PHOTODIODE FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS"

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$40,000.00
Agency:
NSF
Principal Investigator:
Abstract:
N/a

"DEVELOPMENT OF A UNIQUE LABORATORY STANDARD INDIUM GALLIUM ARSENIDE DETECTOR FOR THE 0.5-1.7 MICRON SPECTRAL RANGE "

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,223.00
Agency:
NASA
Principal Investigator:
Abstract:
N/a

"DEVELOPMENT OF A UNIQUE LABORATORY STANDARD INDIUM GALLIUM ARSENIDE DETECTOR FOR THE 0.5-1.7 MICRON SPECTRAL RANGE "

Award Year / Program / Phase:
1988 / SBIR / Phase II
Award Amount:
$500,000.00
Agency:
NASA
Principal Investigator:
Abstract:
Spectral measurements over the visible/near-infrared 0.5-1.7 micron range cannot be done at present with a singledetector. two separate detectors (silicon for 0.5-1.1 microns and germanium for 1.0-1.7 microns) must presently be used in order to cover the entire spectral range. this complicates… More

A HIGH PERFORMANCE 1.93 MICRON SEMICONDUCTOR PHOTODIODE

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,772.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
George a gasparian
Abstract:
There is a great interest in high speed (5 ns) light detection in the 1.7 to 2.0 micron spectral range. applications include gas monitoring, downhole logging, atmospheric transmission, and active optical proxity sensing. although semiconductor photodiodes (inas, insb, pbs, pbse, etc.) are available,… More

A MERGED HYDRIDE/METALORGANIC VPE REACTOR FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,772.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr Gregory H Olsen
Abstract:
N/a

"HIGH PERFORMANCE INDIUM GALLIUM ARSENIDE ARRAYS FOR THE 1.0-1.7 MICRON SPECTRUM"

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,959.00
Agency:
NASA
Principal Investigator:
Dr Vladimir S Ban
Abstract:
N/a

DEVELOPMENT OF A NEW VAPOR PHASE EPITAXY (VPE) TECHNIQUE TO PREPARE THE SEMICONDUCTOR - IN 0.53 GA 0.47 AS

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,772.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Vladimir S Ban
Abstract:
N/a

"A SIMPLE HIGH PERFORMANCE AVALANCHE PHOTODIODE FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS"

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$222,944.00
Agency:
NSF
Principal Investigator:
Abstract:
Future high speed ( 1gbit) optical communication systems will require avalanche photodetectors (apds) which operate at 1300 and 1550nm wavelengths. laboratory tests have shown that ingaas/inp apds can be made which outperform both pin/fet receivers and germanium apds at these wavelengths - at high… More

"HIGH PERFORMANCE INDIUM GALLIUM ARSENIDE ARRAYS FOR THE 1.0-1.7 MICRON SPECTRUM"

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$497,211.00
Agency:
NASA
Principal Investigator:
Dr Vladimir S Ban
Abstract:
We propose to optimize epitaxial layers of in.53ga.47as alloys which detect light in the 1.0-1.7 micron spectral region. the goal of the program is to bring the yield of ingaas photodiodes to such a level that production of multi-element (>50) linear arrays with 10% uniformity becomepractical within… More

A MERGED HYDRIDE/METALORGANIC VPE REACTOR FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$461,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr Gregory H Olsen
Abstract:
Epitaxx proposes to merge the best aspects of hydride vapor phase epitaxy (vpe) and metalorganic cheical vapor deposition (mocvd) into one technique to fabricate superior ingaasp/inp detectors, lasers and leds. the hydride vpe techniques is a proven growth technique for ingaas detectors and 1300 nm… More

DEVELOPMENT OF A NEW VAPOR PHASE EPITAXY (VPE) TECHNIQUE TO PREPARE THE SEMICONDUCTOR - IN 0.53 GA 0.47 AS

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$521,429.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Vladimir S Ban
Abstract:
Hydride vapor phase epitaxy (vpe) is a well established growth method for devices such as ingaas photodetectors. recently, an important simplification of the method was demonstrated in which in-ga alloy sources (instead of separate in and ga metals) were used. furthermore, it was demonstrated that… More

LARGE SIZE (>1CM) INGAAS PHOTODETECTORS FOR 1.3 TO 2.1 UM

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$49,411.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr Gregory H Olsen
Abstract:
We propose to develop a large-size (>1cm diameter) indium gallium arsenide photodetector with high quantum efficiency (>70%) out to 2.1um for fiber optics, eyesafe rangefinding, lidar and laser seeking. these devices will have low dark currents for high 300 deg k sensitivity (d* (12)cm (hz)(1/2/w)… More

HIGH-GAIN AVALANCHE PHOTODIODE ARRAYS FOR LONG-WAVELENGTH APPLICATIONS

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$49,909.00
Agency:
NASA
Principal Investigator:
Dr Gregory H Olsen
Abstract:
We propose to develop high-performance arrays of indium gallium arsenide (ingaas) avalanche photodiodes (apds) for fiber optic, remote sensing and spectroscopy applications inthe 1.0-1.7 micron spectral band. this development will increase array sensitivity a factor ten over conventional pin… More

AN OPTOELECTRONIC INTEGRATED CIRCUIT (OEIC) INDIUM GALIUM ARSENIDE RECEIVER ON A SILICON SUBSTRATE

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$49,765.00
Agency:
NSF
Principal Investigator:
Gregory H Olsen , Principal Investigator
Abstract:
The researchers propose to develop a fully monolithic integrated receiver chip for the 1.3 and 1.55 um fiber optic wavelengths. the chip will be fabricated on a si substrate so that conventional bipolar mos-fet technology can be used to construct all of the preamplifier electronics. they will use an… More

"A 128 X 128 ELEMENT INGAAS DETECTOR ARRAY FOR 1.0 - 2.5 UM AT 300K"

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,793.00
Agency:
NASA
Principal Investigator:
Gregory H. Olsen , President & Ceo
Abstract:
We propose to develop a two-dimensional indium gallium arsenide detector array of unprecedented size (128 x 128 elements) for room temperature operation between 1.0 - 2.5 um. an innovative hydride vapor phase epitaxy crystal growth method and fiber optic probing technique to measure quantum… More

VISIBLE (0.62 UM) SEMICONDUCTOR DIODE LASERS GROWN BY HYDRIDE VAPOR PHASE EPITAXY

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,765.00
Agency:
NASA
Principal Investigator:
Donald E. Ackley , Chief Scientific Officer
Abstract:
Visible semiconductor diode lasers are of interest for optical recording applications for increased densities and for direct read after write applications. currently available devices based on ingap/ingaalp heterostructures grown by mocvd operate at wavelengths of 0.67 um. difficulties arise in… More

STUDY OF ANISOTROPIC ROOM TEMPERATURE CH4/H2 PLASMA ETCHING OF INP INGAAS AND HGCDTE WITH APPLICATIONS TO OPTOELECTRIC DEVICE ...

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,806.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Dr Vladimir Ban
Abstract:
N/a

AUTOMATED TOTAL PRECIPITATION GAGE

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$33,898.00
Agency:
DOC
Principal Investigator:
Gerald R Price
Abstract:
N/a

AUTOMATED TOTAL PRECIPITATION GAGE

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$173,347.00
Agency:
DOC
Principal Investigator:
Gerald R Price
Abstract:
The gauge described in this proposal provides a means of automating the process of collecting and measuring atmospheric hydrometers (precipitation in either liquid or ice phase with the ability to operate in the harsh winter environment with snowdepths exceeding twenty feet). automation of this… More