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Eti Instrument Systems Inc.

Company Information
Address
1317 Webster Ave
Fort Collins, CO 80524
United States



Information

UEI: N/A

# of Employees: N/A


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. HIGH-GAIN AVALANCHE PHOTODIODE ARRAYS FOR LONG-WAVELENGTH APPLICATIONS

    Amount: $49,909.00

    WE PROPOSE TO DEVELOP HIGH-PERFORMANCE ARRAYS OF INDIUM GALLIUM ARSENIDE (INGAAS) AVALANCHE PHOTODIODES (APDS) FOR FIBER OPTIC, REMOTE SENSING AND SPECTROSCOPY APPLICATIONS INTHE 1.0-1.7 MICRON SPECTR ...

    SBIRPhase I1989National Aeronautics and Space Administration
  2. AN OPTOELECTRONIC INTEGRATED CIRCUIT (OEIC) INDIUM GALIUM ARSENIDE RECEIVER ON A SILICON SUBSTRATE

    Amount: $49,765.00

    THE RESEARCHERS PROPOSE TO DEVELOP A FULLY MONOLITHIC INTEGRATED RECEIVER CHIP FOR THE 1.3 AND 1.55 UM FIBER OPTIC WAVELENGTHS. THE CHIP WILL BE FABRICATED ON A SI SUBSTRATE SO THAT CONVENTIONAL BIPOL ...

    SBIRPhase I1989National Science Foundation
  3. "DEVELOPMENT OF A UNIQUE LABORATORY STANDARD INDIUM GALLIUM ARSENIDE DETECTOR FOR THE 0.5-1.7 MICRON SPECTRAL RANGE "

    Amount: $500,000.00

    SPECTRAL MEASUREMENTS OVER THE VISIBLE/NEAR-INFRARED 0.5-1.7 MICRON RANGE CANNOT BE DONE AT PRESENT WITH A SINGLEDETECTOR. TWO SEPARATE DETECTORS (SILICON FOR 0.5-1.1 MICRONS AND GERMANIUM FOR 1.0-1.7 ...

    SBIRPhase II1988National Aeronautics and Space Administration
  4. A HIGH PERFORMANCE 1.93 MICRON SEMICONDUCTOR PHOTODIODE

    Amount: $49,772.00

    THERE IS A GREAT INTEREST IN HIGH SPEED (5 NS) LIGHT DETECTION IN THE 1.7 TO 2.0 MICRON SPECTRAL RANGE. APPLICATIONS INCLUDE GAS MONITORING, DOWNHOLE LOGGING, ATMOSPHERIC TRANSMISSION, AND ACTIVE OPTI ...

    SBIRPhase I1988Department of Defense Army
  5. A MERGED HYDRIDE/METALORGANIC VPE REACTOR FOR HIGH-PERFORMANCE OPTOELECTRONIC DEVICES

    Amount: $49,772.00

    N/A

    SBIRPhase I1988Department of Defense Army
  6. "HIGH PERFORMANCE INDIUM GALLIUM ARSENIDE ARRAYS FOR THE 1.0-1.7 MICRON SPECTRUM"

    Amount: $49,959.00

    N/A

    SBIRPhase I1988National Aeronautics and Space Administration
  7. DEVELOPMENT OF A NEW VAPOR PHASE EPITAXY (VPE) TECHNIQUE TO PREPARE THE SEMICONDUCTOR- IN 0.53 GA 0.47 AS

    Amount: $49,772.00

    N/A

    SBIRPhase I1988Department of Defense Air Force
  8. INNOVATIVE GROWTH TECHNIQUE FOR INFRARED DETECTORS: ATOMIC LAYER EPITAXY

    Amount: $49,715.00

    WE PROPOSE TO DEVELOP AN ATOMIC LAYER EPITAXY (ALE) TECHNIQUE WHEREBY THE CRYSTAL GROWTH OF SINGLE ATOMIC LAYERS WILL BE APPLIED TO THE FABRICATION OF INFRARED DETECTOR ARRAYS WITH EXTREMELY HIGH UNIF ...

    SBIRPhase I1987Department of Defense Air Force
  9. "A SIMPLE HIGH PERFORMANCE AVALANCHE PHOTODIODE FOR LONG-WAVELENGTH OPTICAL COMMUNICATIONS"

    Amount: $40,000.00

    N/A

    SBIRPhase I1987National Science Foundation
  10. "DEVELOPMENT OF A UNIQUE LABORATORY STANDARD INDIUM GALLIUM ARSENIDE DETECTOR FOR THE 0.5-1.7 MICRON SPECTRAL RANGE "

    Amount: $49,223.00

    N/A

    SBIRPhase I1987National Aeronautics and Space Administration
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