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Company Information:

Name: Fairfield Crystal Technology
Address: 8 South End Plaza
New Milford, CT 06776-
Located in HUBZone: No
Woman-Owned: No
Minority-Owned: No
URL: N/A
Phone: (860) 354-2111

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $874,580.00 7
SBIR Phase II $2,450,000.00 3

Award List:

A Novel Growth Technique for Large Diameter AlN Single Crystal

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: DOE
Principal Investigator: Shaoping Wang, Dr.
Award Amount: $99,586.00
Abstract:
78072S III-V nitride-based, high brightness, UV and visible light emitting diodes (LEDs) are of a great interest for general illumination, but the low light output efficiencies of current high brightness LEDs are still inadequate. A key material issue preventing the achievement of higher light… More

A Novel Growth Technique for Large Diameter AlN Single Crystal

Award Year / Program / Phase: 2006 / SBIR / Phase II
Agency: DOE
Principal Investigator: Shaoping Wang, Mr.
Award Amount: $750,000.00
Abstract:
Nitride-based, high-brightness, ultraviolet, visible, and white light emitting diodes are candidate devices for replacing incandescent light bulbs and fluorescent light fixtures in general illumination applications, due to their tremendous energy saving potential, long lifetime, and high efficiency.… More

Large Diameter Zinc Selenide (ZnSe) Single Crystals for Radiation Detectors

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: DOE
Principal Investigator: Shaoping Wang, Dr.
Award Amount: $99,994.00
Abstract:
Tellurium-doped single-crystal ZnSe, or ZnSe(Te), is an important material for fabricating the radiation detectors needed for nuclear physics research. To date, there is no efficient crystal growth technique for producing high-quality, large-diameter, ZnSe single crystals. This project will… More

SBIR Phase I: Large Diameter ZnS Single Crystal Substrates for II-VI-based UV-Detectors

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency: NSF
Principal Investigator: Shaoping Wang, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research Phase I research project will investigate a novel sublimation crystal growth technique for producing large diameter, high quality zinc sulfide (ZnS) single crystal substrates suitable for fabricating specific UltraViolet (UV) detectors. These UV detectors that… More

SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Shaoping Wang, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel technique for producing freestanding GaN wafers and substrates. High-quality freestanding GaN substrates are important for fabrication of high-performance light emitters, such as blue laser diodes, UV LEDs, and… More

SBIR Phase I: Large Diameter CdS Single Crystal Substrates for II-VI-based Light Emitters and Displays

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Shaoping Wang, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel crystal growth technique for volume production of large diameter, high quality cadmium sulfide (CdS) single crystals suitable as lattice-matched substrates for fabricating II-VI-based light emitters, particularly… More

SBIR Phase II:A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency: NSF
Principal Investigator: Shaoping Wang
Award Amount: $500,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase II project is to demonstrate a novel technique for producing large-diameter freestanding GaN wafers and substrates. Despite the research efforts in the last decade, affordable GaN wafers and substrates of large diameters have not been widely… More

SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: NSF
Principal Investigator: Shaoping Wang, PhD
Award Amount: $150,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light… More

High-quality, low-cost GaN single crystal substrates for high-power devices

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency / Branch: DOE / ARPA-E
Principal Investigator: Shaoping Wang, Vice President – (860) 354-2111
Award Amount: $225,000.00
Abstract:
The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high… More

High-quality, low-cost GaN single crystal substrates for high-power devices

Award Year / Program / Phase: 2014 / SBIR / Phase II
Agency / Branch: DOE / ARPA-E
Principal Investigator: Shaoping Wang, Vice President – (860) 354-2111
Award Amount: $1,200,000.00
Abstract:
The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high… More