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Company Information:

Company Name:
Fairfield Crystal Technology
Address:
8 South End Plaza
New Milford, CT 06776-4200
Phone:
(860) 354-2111
URL:
EIN:
201702779
DUNS:
168455116
Number of Employees:
7
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $874,580.00 7
SBIR Phase II $2,450,000.00 3

Award List:

A Novel Growth Technique for Large Diameter AlN Single Crystal

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,586.00
Agency:
DOE
Principal Investigator:
Abstract:
78072S III-V nitride-based, high brightness, UV and visible light emitting diodes (LEDs) are of a great interest for general illumination, but the low light output efficiencies of current high brightness LEDs are still inadequate. A key material issue preventing the achievement of higher light… More

A Novel Growth Technique for Large Diameter AlN Single Crystal

Award Year / Program / Phase:
2006 / SBIR / Phase II
Award Amount:
$750,000.00
Agency:
DOE
Principal Investigator:
Abstract:
Nitride-based, high-brightness, ultraviolet, visible, and white light emitting diodes are candidate devices for replacing incandescent light bulbs and fluorescent light fixtures in general illumination applications, due to their tremendous energy saving potential, long lifetime, and high efficiency.… More

Large Diameter Zinc Selenide (ZnSe) Single Crystals for Radiation Detectors

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,994.00
Agency:
DOE
Principal Investigator:
Abstract:
Tellurium-doped single-crystal ZnSe, or ZnSe(Te), is an important material for fabricating the radiation detectors needed for nuclear physics research. To date, there is no efficient crystal growth technique for producing high-quality, large-diameter, ZnSe single crystals. This project will… More

SBIR Phase I: Large Diameter ZnS Single Crystal Substrates for II-VI-based UV-Detectors

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I research project will investigate a novel sublimation crystal growth technique for producing large diameter, high quality zinc sulfide (ZnS) single crystal substrates suitable for fabricating specific UltraViolet (UV) detectors. These UV detectors that… More

SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel technique for producing freestanding GaN wafers and substrates. High-quality freestanding GaN substrates are important for fabrication of high-performance light emitters, such as blue laser diodes, UV LEDs, and… More

SBIR Phase I: Large Diameter CdS Single Crystal Substrates for II-VI-based Light Emitters and Displays

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel crystal growth technique for volume production of large diameter, high quality cadmium sulfide (CdS) single crystals suitable as lattice-matched substrates for fabricating II-VI-based light emitters, particularly… More

SBIR Phase II:A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$500,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase II project is to demonstrate a novel technique for producing large-diameter freestanding GaN wafers and substrates. Despite the research efforts in the last decade, affordable GaN wafers and substrates of large diameters have not been widely… More

SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light… More

High-quality, low-cost GaN single crystal substrates for high-power devices

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$225,000.00
Agency / Branch:
DOE / ARPA-E
Principal Investigator:
Shaoping Wang, Vice President – (860) 354-2111
Abstract:
The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high… More

High-quality, low-cost GaN single crystal substrates for high-power devices

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$1,200,000.00
Agency / Branch:
DOE / ARPA-E
Principal Investigator:
Shaoping Wang, Vice President – (860) 354-2111
Abstract:
The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high… More