Next-Generation Detector and Imager Development
Improvements in silicon-on-insulator (SOI) technology have resulted in development of monolithic chip designs for radiation image sensors and particle detectors by facilitating the use of the handle silicon layer for the detectors and the SOI layer for the readout circuits. Unfortunately, even the most advanced SOI-based imagers are still limited in effectiveness due to threshold (Vt) shifts when bias voltages are applied to fully deplete the handle silicon for detector performance. The required bias voltage range causes severe shifts in the Vt of the CMOS transistors of the readout circuitry. Flexfet SOI
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American Semiconductor, Inc.
3100 S. Vista Avenue Suite 230 Boise, ID 83705
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