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Company Information:

Company Name:
Gain Electronics Corp
Address:
22 Chubb Wy
Somerville, NJ 08876
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
30
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $184,307.00 3
SBIR Phase II $52,000.00 1

Award List:

MODULATION DOPED FETS ON HETEROSTRUCTURE LAYERS (SDHT, HEMT, TEGFET, MODFET) ARE OF PRIME INTEREST FOR FUTURE HIGH SPEED CIRCUITS WITH IMPROVED PERFORMANCE CHARACTERISTICS.

Award Year / Program / Phase:
1986 / SBIR / Phase I
Award Amount:
$59,682.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr raymond dingle
Abstract:
Modulation doped fets on heterostructure layers (sdht, hemt, tegfet, modfet) are of prime interest for future high speed circuits with improved performance characteristics. circuits based on sdht technology have demonstrated superior performance in speed and speedpower product in digital, as well… More

PATTERNING OF GAAS AND ALGAAS ULTRA-SUBMICRON DEVICE STRUCTURES

Award Year / Program / Phase:
1986 / SBIR / Phase I
Award Amount:
$72,847.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr Raymond Dingle
Abstract:
N/a

PATTERNING OF GAAS AND ALGAAS ULTRA-SUBMICRON DEVICE STRUCTURES

Award Year / Program / Phase:
1987 / SBIR / Phase II
Award Amount:
$52,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr Raymond Dingle
Abstract:
The performance of devices and integrated circuits using selectively doped heterostructure transistors (sdht) has increased dramatically in the past years. a large part of that performance improvement is due to the reduced feature size of the gate electrode. record switching times (6 ps) have been… More

HIGH EFFICIENCY MONOLITHIC GUNN OSCILLATORS

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$51,778.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Thomas hierl
Abstract:
Most gunn diode oscillator applications currently employ a discrete gunn diode embedded into either a hybrid or a waveguide matching circuit. next generation military systems would benefit from a monolithic design which incorporates the gunn diode and its associated matching circuitry onto one gaas… More