Modulation doped fets on heterostructure layers (sdht, hemt, tegfet, modfet) are of prime interest for future high speed circuits with improved performance characteristics. circuits based on sdht technology have demonstrated superior performance in speed and speedpower product in digital, as well… More

The performance of devices and integrated circuits using selectively doped heterostructure transistors (sdht) has increased dramatically in the past years. a large part of that performance improvement is due to the reduced feature size of the gate electrode. record switching times (6 ps) have been… More

Most gunn diode oscillator applications currently employ a discrete gunn diode embedded into either a hybrid or a waveguide matching circuit. next generation military systems would benefit from a monolithic design which incorporates the gunn diode and its associated matching circuitry onto one gaas… More