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Company Information:

Company Name: GALAXY COMPOUND SEMICONDUCTORS, INC.
City: Spokane
State: WA
Zip+4: 99206 4158
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (509) 892-1114

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $468,577.00 5
SBIR Phase II $2,249,875.00 3

Award List:

Non-Contact Final Polish/Passivation Technology for the Production of Epi-Ready GaSb Wafers

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Daniel Bakken, Senior Engineer
Award Amount: $99,000.00
Abstract:
"Special technology and circuit architecture is under investigation for implementation of low power electronics (LPE) that operate at low supply voltages without sacrificing performance. GaSb substrates have advantages that make it attractive forapplications that require low power and high… More

Non-Contact Final Polish/Passivation Technology for the Production of Epi-Ready InSb and GaSb Wafers

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Daniel Bakken, Chief Scientist
Award Amount: $749,949.00
Abstract:
Special technology and circuit architecture is under investigation for implementation of high performance, infra-red, and low power electronics technology. InSb and GaSb substrates have advantages that make them attractive and in use for high frequency stealth (such as the joint strike fighter) and… More

Materials and Processes for Bulk Antimony-based Substrate Materials

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Lisa P. Allen, Technology Programs Direc
Award Amount: $99,757.00
Abstract:
GaSb substrates are attractive for higher temperature infrared detectors for space-based and stealth applications. However, substrate inconsistency inhibits their widespread commercial application. In particular, producing damage-free GaSb surfaces and sub-surfaces with an easily desorbed oxide for… More

Advanced Sensor Materials for Space

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Gordon Dallas, CEO
Award Amount: $99,946.00
Abstract:
GaSb substrates have advantages that make them attractive for implementation of very long wavelength infrared (VLWIR) detectors with higher operating temperatures for stealth and space based applications. A significant processing issue for detector fabrication based upon InAs/GaSb and related… More

Indium Antimonide Substrate Growth for Affordable Large-Format Mid-Infrared (IR) Imagers

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Gordon Dallas, CEO
Award Amount: $99,876.00
Abstract:
A key component for stealth defense is the megapixel InSb based infrared focal plane arrays used for fighter aircraft support and protection. A significant aspect inhibiting widespread military and commercial application of InSb IRFPAs is the size of the substrates. The Czochralski method of… More

Advanced Sensor Materials for Space

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Gordon Dallas, Founder and VP
Award Amount: $750,000.00
Abstract:
Advanced technology and circuit architecture is under investigation for high performance, infra-red, and low power electronics. GaSb substrates have advantages that are attractive for implementation of very long wavelength infrared (VLWIR) detectors with higher operating temperatures for spaced… More

Indium Antimonide Substrate Growth for Affordable Large-Format Mid-Infrared (IR) Imagers

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Gordon Dallas, Founder and CEO
Award Amount: $749,926.00
Abstract:
A key component for stealth defense is the megapixel InSb based infrared focal plane arrays (IRFPAs) used for fighter aircraft support and protection. A significant aspect inhibiting widespread military and commercial application of InSb IRFPAs is the size of the substrates. During Phase I, the… More

Novel Growth and Processing of an Extremely High Performance, Low Defect FPAs Utilizing HgCdTe on InSb Substrates

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: L. Allen, Technology Programs Director
Award Amount: $69,998.00
Abstract:
HgCdTe based IR detectors are used in critical military thermal imaging systems and free-space communication. A key component for stealth defense is the megapixel IRFPAs used for fighter aircraft. A significant aspect inhibiting widespread use of HgCdTe for LWIR and VLWIR detectors is the difficulty… More