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GENESIC SEMICONDUCTOR INC.

Company Information
Address
43670 TRADE CENTER PL STE 155
DULLES, VA 20166-2123
United States


http://www.genesicsemi.com

Information

UEI: DV7NF6NE49J6

# of Employees: 19


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: Yes

Woman Owned: No



Award Charts




Award Listing

  1. 4H-SiC BiCMOS Development on 6” wafers in a High-Volume Production Foundry

    Amount: $167,497.17

    GeneSiC Semiconductor is leveraging recently reported novel techniques for high-performance 4H-silicon carbide MOSFETs, deep in-house expertise in SiC device design and robust device manufacturing fac ...

    SBIRPhase I2021Department of Defense Defense Microelectronics Activity
  2. Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation

    Amount: $2,000,000.00

    GeneSiC Semiconductor is developing > 20 kV, > 1kA stackable 4H-SiC based DRSDs in this SBIR program for next-generation US NAVY applications featuring: • Single-Chip ratings of = 2 kV and = 100 A ...

    SBIRPhase II2021Department of Defense Navy
  3. Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers

    Amount: $1,148,670.00

    Reducing the size, weight, and increasing the efficiency of automotive traction power inverters requires the development of novel high-voltage, high current silicon carbide power modules, since the ex ...

    SBIRPhase II2020Department of Energy
  4. Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities

    Amount: $1,148,670.00

    Power electronics for Grid-tied Battery Energy Storage Systems (BESS) featuring: (a) newly developed monolithically integrated High Voltage SiC MOSFET- Schottky Diodes; (b) Intelligent Gate Drivers th ...

    SBIRPhase II2020Department of Energy
  5. Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities

    Amount: $206,500.00

    Power electronics for Grid-tied Battery Energy Storage Systems (BESS) featuring: (a) newly developed monolithically integrated High Voltage SiC MOSFET- Schottky Diodes; (b) Intelligent Gate Drivers th ...

    SBIRPhase I2019Department of Energy
  6. Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers

    Amount: $206,500.00

    Next-generation extreme fast charging stations with 400 kilowatt output is identified as key to significantly increase the market share of electric vehicles. As compared to the existing 50 kW fast cha ...

    SBIRPhase I2019Department of Energy
  7. Stackable, high voltage Silicon Carbide based DSRDs

    Amount: $129,999.00

    Silicon carbide (SiC) based stackable drift step recovery diodes (DSRDs) with 20 kV/1 kA/=1 MHz capability are proposed in this program for potential use in the next-generation of high-power microwave ...

    SBIRPhase I2019Department of Defense Navy
  8. Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers

    Amount: $1,010,000.00

    Reducing the size, weight, and increasing the efficiency of automotive traction power inverters requires the development of novel high-voltage, high current silicon carbide high-speed transistors and ...

    SBIRPhase II2018Department of Energy
  9. Automotive-qualified 900 V/250 A SiC DMOSFETs with integrated Schottky Rectifiers

    Amount: $150,000.00

    Reducing the size, weight, and increasing the efficiency of electric vehicle traction power inverters requires the development of novel high-voltage, high current Silicon Carbide high-speed switches a ...

    SBIRPhase I2017Department of Energy
  10. Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs

    Amount: $750,000.00

    This two-phase SBIR program targets the need for highly integrated SiC-based electronics systems by developing gate drive circuitry that can be fully integrated with 4H-SiC power switching devices, en ...

    SBIRPhase II2017National Aeronautics and Space Administration
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