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Company Information:

Company Name: GeneSiC Semiconductor Inc.
City: Dulles
State: VA
Zip+4: 20166-2123
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
Phone: (703) 996-8200

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,229,607.00 11
SBIR Phase II $3,478,683.00 5
STTR Phase I $350,000.00 3
STTR Phase II $750,000.00 1

Award List:

SiC Switch for Laser Power Modules

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Ranbir Singh, President
Award Amount: $100,000.00
Abstract:
The development of high performance power module based on fast, ultra high voltage (UHV) SiC switch is proposed. A number of innovative power device structures are introduced here for the first time. Using a comprehensive set of evaluation metrics, these devices will be benchmarked against more… More

SiC Semiconductor Switches for Klystron Modulators

Award Year / Program / Phase: 2006 / SBIR / Phase I
Agency: DOE
Principal Investigator: Ranbir Singh, Dr.
Award Amount: $99,956.00
Abstract:
The severe voltage, speed, and size specifications of Klystron modulators in the International Linear Collider, a facility important to DOE high-energy-physics research, may neccessitate the development of ultra-high-voltage, SiC semiconductor switches. These switches need to be optimized for… More

Silicon Carbide Optically Gate Solid State Power Switch

Award Year / Program / Phase: 2007 / STTR / Phase I
Agency: DOE
Research Institution: University of Illinois - Chicago
Principal Investigator: Ranbir Singh, Dr
Award Amount: $100,000.00
RI Contact: Eric Gislason
Abstract:
Traditional power semiconductor devices, such as those used in radio frequency acceleration structures for high energy physics research, have been extensively used as pulsed-power switches. For optical switches, however, the key research problem is designing a suitable device structure that can… More

Large Area SiC GTO Thyristor Development Widebandgap High Voltage High Frequency Switches

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency: DOE
Principal Investigator: Ranbir Singh, Dr
Award Amount: $100,000.00
Abstract:
Energy storage for utility applications requires the development of a high voltage, high current, high-frequency silicon-carbide-based switch. These applications demand pulse width modulation (PWM) control with order-of-magnitude higher power levels at an order-of-magnitude higher frequency,… More

SiC Semiconductor Switches for Klystron Modulators

Award Year / Program / Phase: 2007 / SBIR / Phase II
Agency: DOE
Principal Investigator: Ranbir Singh, Dr
Award Amount: $650,000.00
Abstract:
The extremely challenging speed (>3 MHz) and voltage (>5 kV) specifications of Damping Ring (DR) Kicker Modulators for the planned International Linear Collider (ILC) require the development of revolutionary new semiconductor switch technology. In addition, the robustness and reliability of… More

SiC Arrayed Detectors for Fast Neutron Detection

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / DTRA
Principal Investigator: Ranbir Singh, President
Award Amount: $99,998.00
Abstract:
Fast neutron radiography is targeted towards detection of explosives, contraband and for the screening of cargo. The energy discrimination of conventional neutron detection methods is poor and the presence of a gamma-ray background is a major source of interference. In this program, GeneSiC… More

CVD-based Polytype Controlled SiC Nanowire Growth

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOC / NIST
Principal Investigator: Siddarth Sundaresan
Award Amount: $90,000.00
Abstract:
A novel chemical vapor deposition (CVD) based step-flow epitaxy process is proposed for controllable growth of SiC nanowires with high polytype integrity. SiC nanowires will be grown in a modified commercial high-temperature CVD reactor, used by industry for growing high-quality SiC epitaxial thin… More

SiC Switch for Laser Power Modules

Award Year / Program / Phase: 2008 / SBIR / Phase II
Agency / Branch: DOD / OSD
Principal Investigator: Ranbir Singh, President
Award Amount: $750,000.00
Abstract:
The stringent power quality, size weight and volume requirements for operating high power lasers require the development of revolutionary new semiconductor switch technology. The challenging specifications (>20 kHz, >4.5 kV) demanded by these applications are enabled by fully exploiting the superior… More

Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Soldered Contacts

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Ranbir Singh, President
Award Amount: $69,976.00
Abstract:
The development of a novel high performance power module based on fast, ultra high voltage Thyristor-based SiC switch is proposed. Innovations proposed include: (a) development of a new type of Silicon Carbide Thyristor structure optimized for high pulsed currents; (b) Wire bond-less packages with… More

High Voltage High Frequency SiC Switch

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Ranbir Singh, President
Award Amount: $69,911.00
Abstract:
The stringent power quality, size, weight and volume specifications for operating high power hardware in more-electric warships require the development of >100 kHz, 2 kV Silicon Carbide based power devices. GeneSiC proposes the development of a single chip power subcircuit using a unique and… More

Large Area SiC GTO Thyristor Development Widebandgap High Voltage High Frequency Switches

Award Year / Program / Phase: 2008 / SBIR / Phase II
Agency: DOE
Principal Investigator: Ranbir Singh, Dr
Award Amount: $750,000.00
Abstract:
The extremely challenging speed and voltage specifications of converter circuits used to attach renewable energy sources and energy storage elements to the power grid require the development of new semiconductor switch technology. In addition, the robustness and reliability of energy storage power… More

Development of an Accelerated Life Test for Wide-Bandgap (SiC) HEV/PHEV Power Conversion Modules

Award Year / Program / Phase: 2009 / STTR / Phase I
Agency: DOE
Research Institution: University of Illinois, Chicago
Principal Investigator: Ranbir Singh, Dr
Award Amount: $100,000.00
RI Contact: Sudip Mazumder
Abstract:
Major automobile manufacturers have expressed a strong interest in the development of high-frequency power circuits for use in emerging plug-in hybrid electric vehicles (PHEVs). However, the prediction of the life-cycle of high power SiC devices poses a unique challenge because of the higher… More

High Voltage High Frequency SiC Switch

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency: DOD
Principal Investigator: Ranbir Singh, President – (703) 996-8200
Award Amount: $599,983.00
Abstract:
The stringent power quality, size weight and volume requirements for operating next-generation intelligent power systems (NGIPS) require the development of revolutionary new semiconductor switch technology. The challenging specifications (>20 kHz,>10 kV) demanded by these applications are… More

Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Soldered Contacts

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Ranbir Singh, President
Award Amount: $728,700.00
Abstract:
The extremely challenging speed 10 kV) specifications of High Power Microwave (HPM), Railgun, and Electro-Magnetic Armor circuits require the development of revolutionary new semiconductor switch technology that promises a 3-10X reduction in the series connected stages. The inherent high voltage and… More

Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: NASA
Principal Investigator: Siddarth Sundaresan, Principal Investigator
Award Amount: $100,000.00
Abstract:
Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500<SUP>o</SUP>C capable motor control power modules for direct integration with the exploration rovers required to operate in Venus-like environments. The Phase I of this proposed work… More

15 kV Phase Leg Modules with SiC Monolithically Integrated JBS Rectifier with Super Junction Transistor (MIDSJT) Devices

Award Year / Program / Phase: 2012 / SBIR / Phase I
Agency: DOE
Principal Investigator: Siddarth Sundaresan, Dr. – 703-996-8200
Award Amount: $150,000.00
Abstract:
This project will create a new category of advanced power modules for use in power electronics for energy storage in the medium-voltage range and & gt; 100 kW ratings. A design showing a significant increase in circuit efficiency, cost reduction, an increase in power density, and a reduction in… More

Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost converter platform for up-tower wind applications

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOE
Principal Investigator: Siddarth Sundaresan, Dr.
Award Amount: $150,000.00
Abstract:
SiC power electronics are ideally suited for reducing the size and weight of power electronics systems that are used in wind power converters. Present power electronics systems require large transformers which operate a modest frequencies that prevents their use on top of the turbine tower. The… More

1200 V/50 A AlGaN-GaN-Si MOS-HFETs and Schottky Rectifiers

Award Year / Program / Phase: 2013 / STTR / Phase I
Agency: DOE
Research Institution: Cornell University
Principal Investigator: Siddarth Sundaresan, Dr.
Award Amount: $150,000.00
RI Contact:
Abstract:
DoEs recent emphasis on increasing fuel economy requires electrification of the vehicle powertrain, thus leading to extended range electric vehicles (EREVs), hybrid electric vehicles (HEVs), battery electric vehicles (BEV) and fuel cell electric vehicles (FCEV). All electric propulsion systems… More

500C/3.8 kW-class Resonant-Mode Power Converter featuring SiC Super Junction Transistors

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: NASA
Principal Investigator: Siddarth Sundaresan, Dr
Award Amount: $199,766.00
Abstract:
Capitalizing on a potent confluence of expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor and Cornell University jointly propose a SBIR program focused on the development of 15 kW/300?C-rated power converters using… More