The development of high performance power module based on fast, ultra high voltage (UHV) SiC switch is proposed. A number of innovative power device structures are introduced here for the first time. Using a comprehensive set of evaluation metrics, these devices will be benchmarked against more… More

The severe voltage, speed, and size specifications of Klystron modulators in the International Linear Collider, a facility important to DOE high-energy-physics research, may neccessitate the development of ultra-high-voltage, SiC semiconductor switches. These switches need to be optimized for… More

Traditional power semiconductor devices, such as those used in radio frequency acceleration structures for high energy physics research, have been extensively used as pulsed-power switches. For optical switches, however, the key research problem is designing a suitable device structure that can… More

Energy storage for utility applications requires the development of a high voltage, high current, high-frequency silicon-carbide-based switch. These applications demand pulse width modulation (PWM) control with order-of-magnitude higher power levels at an order-of-magnitude higher frequency,… More

The extremely challenging speed (>3 MHz) and voltage (>5 kV) specifications of Damping Ring (DR) Kicker Modulators for the planned International Linear Collider (ILC) require the development of revolutionary new semiconductor switch technology. In addition, the robustness and reliability of… More

Fast neutron radiography is targeted towards detection of explosives, contraband and for the screening of cargo. The energy discrimination of conventional neutron detection methods is poor and the presence of a gamma-ray background is a major source of interference. In this program, GeneSiC… More

A novel chemical vapor deposition (CVD) based step-flow epitaxy process is proposed for controllable growth of SiC nanowires with high polytype integrity. SiC nanowires will be grown in a modified commercial high-temperature CVD reactor, used by industry for growing high-quality SiC epitaxial thin… More

The stringent power quality, size weight and volume requirements for operating high power lasers require the development of revolutionary new semiconductor switch technology. The challenging specifications (>20 kHz, >4.5 kV) demanded by these applications are enabled by fully exploiting the superior… More

The development of a novel high performance power module based on fast, ultra high voltage Thyristor-based SiC switch is proposed. Innovations proposed include: (a) development of a new type of Silicon Carbide Thyristor structure optimized for high pulsed currents; (b) Wire bond-less packages with… More

The stringent power quality, size, weight and volume specifications for operating high power hardware in more-electric warships require the development of >100 kHz, 2 kV Silicon Carbide based power devices. GeneSiC proposes the development of a single chip power subcircuit using a unique and… More

The extremely challenging speed and voltage specifications of converter circuits used to attach renewable energy sources and energy storage elements to the power grid require the development of new semiconductor switch technology. In addition, the robustness and reliability of energy storage power… More

Major automobile manufacturers have expressed a strong interest in the development of high-frequency power circuits for use in emerging plug-in hybrid electric vehicles (PHEVs). However, the prediction of the life-cycle of high power SiC devices poses a unique challenge because of the higher… More

The stringent power quality, size weight and volume requirements for operating next-generation intelligent power systems (NGIPS) require the development of revolutionary new semiconductor switch technology. The challenging specifications (>20 kHz,>10 kV) demanded by these applications are… More

The extremely challenging speed 10 kV) specifications of High Power Microwave (HPM), Railgun, and Electro-Magnetic Armor circuits require the development of revolutionary new semiconductor switch technology that promises a 3-10X reduction in the series connected stages. The inherent high voltage and… More

Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500<SUP>o</SUP>C capable motor control power modules for direct integration with the exploration rovers required to operate in Venus-like environments. The Phase I of this proposed work… More

This project will create a new category of advanced power modules for use in power electronics for energy storage in the medium-voltage range and & gt; 100 kW ratings. A design showing a significant increase in circuit efficiency, cost reduction, an increase in power density, and a reduction in… More