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Silicon Carbide Optically Gate Solid State Power Switch

Award Information

Agency:
Department of Energy
Branch:
N/A
Award ID:
84318
Program Year/Program:
2007 / STTR
Agency Tracking Number:
82488
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
GeneSiC Semiconductor Inc.
43670 Trade Center Place, Suite 155 Dulles, VA 20166-2123
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2007
Title: Silicon Carbide Optically Gate Solid State Power Switch
Agency: DOE
Contract: DE-FG02-07ER86311
Award Amount: $100,000.00
 

Abstract:

Traditional power semiconductor devices, such as those used in radio frequency acceleration structures for high energy physics research, have been extensively used as pulsed-power switches. For optical switches, however, the key research problem is designing a suitable device structure that can address the multi-faceted performance demands. This project will design, fabricate, and characterize a high-gain, high-breakdown-voltage, high-temperature-sustainable, non-latched, conductivity-modulated, SiC-based vertical Optically-Gated High-power Solid-state Switch (SiC-OGHSS) for electromagnetic-interference (EMI) immune and optically-isolated pulsed-power applications. The SiC-OGHSS will: (1) be structurally more complex than traditional photoconductive pulsed-power switches; (2) support high current pulses (1 kA) at voltage level of 2 kV, with switching times less than 300 nsec; and (3) handle very high di/dt (40 kA/microsecond) at low duty cycle (< 0.1percent). Phase I will involve the SiC-OGHSS design, optimization, process-flow synthesis, fabrication, and experimental characterization of a 2 kV device under nominal and elevated temperature conditions. In Phase II, a 2nd-generation SiC-OGHSS multichip module will be designed to scale up the power-handling capability, by enhancing breakdown voltage (6 kV), pulse current (> 2 kA), and the device gain. Commercial Applications and other Benefits as described by the awardee: The SiC-OGHSS technology should lead to a new product line in power components, and a number of large aerospace companies already have expressed interest. The worldwide market revenue for discrete power devices is predicted to be over 16 billion dollars, with a market growth rate that has averaged a very robust 15 percent per year since 2001.

Principal Investigator:

Ranbir Singh
Dr
5712657535
ranbir.singh@genesicsemi.com

Business Contact:

Ranbir Singh
Dr
5712657535
ranbir.singh@genesicsemi.com
Small Business Information at Submission:

Genesic Semiconductor Inc.
25050 Riding Plaza Suite 130-801 South Riding, VA 20152

EIN/Tax ID: 201151855
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
University of Illinois - Chicago
1737 West Polk Street
Chicago, IL 60612 7227
Contact: Eric Gislason
Contact Phone: (312) 996-2862
RI Type: Nonprofit college or university