SiC Arrayed Detectors for Fast Neutron Detection
Agency / Branch:
DOD / DTRA
Fast neutron radiography is targeted towards detection of explosives, contraband and for the screening of cargo. The energy discrimination of conventional neutron detection methods is poor and the presence of a gamma-ray background is a major source of interference. In this program, GeneSiC Semiconductor proposes the development of unique and innovative Silicon Carbide neutron detectors using thick ionization layers offer fast response times, invariance to large gamma fluences, and room/high temperature operation. These designs promise optimum neutron response & energy resolution, high speed and large areas. Using a scientific design of experiments methodology, optimization of detector design will be conducted to realize large detection volume, small capacitances, and reasonable bias voltages. A comprehensive study of epitaxial structures, layout designs, termination designs, fabrication methods will be conducted. The fabricated detectors will undergo a detailed testing regimen quantifying the benefits of the developed technology. The degradation of detectors under large gamma fluences will be characterized. This study will pave the way for the realization of large area arrayed SiC neutron detectors in the Phase II of the program with an effective commercialization through partnership with technology and systems integrators, some of who are subcontractors/partners in this program.
Small Business Information at Submission:
GENESIC SEMICONDUCTOR, INC.
25050 Riding Plaza Suite 130-801 South Riding, VA 20152
Number of Employees: