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Company Information:

Company Name: GPD Optoelectronics Corporation
City: Salem
State: NH
Zip+4: 03079 2842
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (603) 894-6865

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $339,931.00 5
SBIR Phase II $1,200,000.00 2
STTR Phase I $98,970.00 1
STTR Phase II $747,576.00 1

Award List:

Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency: NASA
Principal Investigator: Rufus Ward, Vice President, Engineering
Award Amount: $70,000.00
Abstract:
The proposed innovation is germanium power semiconductor devices (diodes and transistors) developed specifically for power-management and actuator-control circuits operating at low and cryogenic temperatures. This is important for upcoming space missions to extremely cold environments, because it… More

Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency: NASA
Principal Investigator: Rufus Ward, Vice President, Engineering
Award Amount: $0.00
Abstract:
The proposed innovation is germanium power semiconductor devices (diodes and transistors) developed specifically for power-management and actuator-control circuits operating at low and cryogenic temperatures. This is important for upcoming space missions to extremely cold environments, because it… More

Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics

Award Year / Program / Phase: 2002 / SBIR / Phase II
Agency: NASA
Principal Investigator: Rufus Ward, Vice President, Engineering
Award Amount: $600,000.00
Abstract:
The proposed innovation is germanium power semiconductor devices (diodes and transistors) developed specifically for power-management and actuator-control circuits operating at low and cryogenic temperatures. This is important for upcoming space missions to extremely cold environments, because it… More

SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency: NASA
Principal Investigator: Rufus Ward, Principal Investigator
Award Amount: $70,000.00
Abstract:
We propose to develop power semiconductor devices (diodes and transistors) for power-management and actuator-control circuits operating at cryogenic temperatures. Cryogenic power electronics can provide important benefits both for space and commercial applications: higher efficiency, reduced size,… More

SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency: NASA
Principal Investigator: Rufus Ward, Principal Investigator
Award Amount: $600,000.00
Abstract:
We propose to continue development of power semiconductor devices (diodes and transistors) for power-management and actuator-control circuits operating at cryogenic temperatures. Cryogenic power electronics can provide important benefits both for space and commercial applications: higher efficiency,… More

Novel SiGe Devices for Cryogenic Power Electronics

Award Year / Program / Phase: 2004 / STTR / Phase I
Agency / Branch: DOD / DARPA
Research Institution: Auburn University
Principal Investigator: Rufus Ward, VP Engineering
Award Amount: $98,970.00
RI Contact: Lester E. Taylor
Abstract:
It is predicted that systems for power generation, power distribution and electric propulsion on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems-partly or entirely-at cryogenic temperatures. We propose to… More

Novel SiGe Devices for Cryogenic Power Electronics

Award Year / Program / Phase: 2005 / STTR / Phase II
Agency / Branch: DOD / DARPA
Research Institution: AUBURN UNIV.
Principal Investigator: Rufus Ward, VP Engineering
Award Amount: $747,576.00
RI Contact: Gene Taylor
Abstract:
Power generation, power distribution and electric propulsion on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems-partly or entirely-at cryogenic temperatures. Our goal is to demonstrate the advantages of… More

GaAs JFETs for Extremely Low-Noise, Deep Cryogenic Sensor Readout

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency: NASA
Principal Investigator: Rufus Ward, Principal Investigator
Award Amount: $100,000.00
Abstract:
Ultrasensitive sensors used in NASAs scientific missions (for example infrared sensors) typically require operation at deep cryogenic temperatures for optimum performance. However, to make full use of their performance requires an ultralow-noise preamplifier co-located in the same, or a nearby,… More

Motor Controller for Extreme Environments Based on SiGe

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NASA
Principal Investigator: Rufus Ward, Principal Investigator
Award Amount: $99,931.00
Abstract:
The proposed innovation is a motor-control subsystem capable of operation in extreme environments, including those to be encountered on the Moon and Mars. Specifically, we will demonstrate operation over the environmental range from +130ýýC down to ýý230ýýC during Phase 1, and from +200ýýC… More