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Company Information:

Company Name:
Gratings, Inc.
Address:
2655A Pan American Freeway, NW
Albuquerque, NM 87107
Phone:
(505) 345-9564
URL:
N/A
EIN:
742828122
DUNS:
879948719
Number of Employees:
4
Woman-Owned?:
No
Minority-Owned?:
Yes
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $889,668.00 10
SBIR Phase II $1,458,770.00 2
STTR Phase I $250,000.00 2

Award List:

LASER INTERFEROMETRIC TECHNIQUES FOR TEMPERATURE MEASUREMENT

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$64,682.00
Agency:
NSF
Principal Investigator:
Saleem H Zaidi
Abstract:
Laser application for noncontact temperature measurement of a semiconductor wafer is being developed. the technique can be applied for either chemical vapor deposition (cvd) or by rapid thermal processing (rtp) systems. the method is based on thermal expansion of a semiconductor wafer, and uses… More

Si Wires in Silicon-On-Insulator Configuration

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Saleem H. Zaidi
Abstract:
We propose a systematic investigation of crystalline Si structures as their dimensions are reduced to quantum sizes (5-10 nm). For convenience, we have chosen Si on insulator (SOI) material for optical and electrical characterization. Our nanofabrication approach relies on simple laser… More

Si MOSFETs Using Nanoscale Gate Arrays

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$99,986.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Saleem Zaidi
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Saleem H. Zaidi, Chief Scientist
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Saleem Zaidi
Abstract:
N/a

Heteroepitaxial growth on nanostructured silicon Surfaces

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Saleem Zaidi, Chief Scientist
Abstract:
This phase I SBIR research effort addresses low-cost, large area development of a universal, compliantsilicon substrate technology for heteroepitaxial growth of compound semiconductor thin films. Due tolattice and thermal expansion coefficient mismatches, pseudomorphic growth beyond critical… More

N/A

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will develop thin film (less than 50 microns) crystalline silicon (Si) photovoltaic (PV) cells. At present, Si wafers account for approximately 50 per cent of the completed PV module cost. Weak near-infrared absorption requires… More

Heteroepitaxial growth on nanostructured silicon surfaces

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$708,770.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Saleem H. Zaidi, Chief Scientist
Abstract:
"This Phase II SBIR research effort addresses several approaches aimed at minimizing lattice constant and thermal expansion mismatches during heteroepitaxial growth of thick (~ several microns) films on Si substrates. A major focus of the research effortwould be one valuation of sub-50-nm linewidth… More

Low Voltage, High Current Nanoscale Si Field Emission Arrays for Operation in Air

Award Year / Program / Phase:
2004 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Saleem H. Zaidi, Chief Scientist
Abstract:
This phase I SBIR proposal addresses development of low voltage (< 10 V), high current (~ 10 ¿A/tip) nanoscale Si field emission deveices capable of operating at atmospheric pressure. Earlier work has demonstrated the feasibility of low-voltage operation in air, however, either the currents were… More

Low Voltage, High Current Nanoscale Si Field Emission Arrays for Operation in Air

Award Year / Program / Phase:
2005 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Saleem H. Zaidi, Chief Scientist
Abstract:
This phase II SBIR proposal is aimed at development of low-power field emission display devices. Flat panel display market is one of the fastest growing technology sectors. Despite its fundamental strengths, the role of field emission (FE) technology in the market place is marginal at best. This is… More

Hyper-thinning of Si for advanced 3-D memory stacking

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Saleem H. Zaidi, Chief Scientist
Abstract:
This phase I SBIR proposal addresses development of a generalized benign, high throughput, low-cost silicon die thinning etch tool. Thinning of Si dies is required in many advanced 3-D packaging, rad-hard and flexible-circuit electronics. For example, using hyper-thin (~ 10-25 m) Si memory… More

Scalable Hyper-Thinning of Si for Three-Dimensional Space Electronics

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Saleem H. Zaidi, Chief Scientist
Abstract:
This phase I proposal addresses ultra-thinning (~ 5-10 micrometer) of Si wafers and memory dies through a mix and match approach in which advanced deep reactive ion etching (DRIE)and pulsed laser etching (PLE)methods are used for coarse and plasmaless XeF2 vapor etching for fine thinning.… More

Microstrostructured Crystalline Silicon Thin-Film Solar Cells

Award Year / Program / Phase:
2009 / STTR / Phase I
Award Amount:
$100,000.00
Agency:
DOE
Principal Investigator:
Research Institution:
Sandia National Laboratories
RI Contact:
Ronald Manginell
Abstract:
This phase I STTR proposal is aimed at reducing cost of energy generation in crystalline silicon solar cells. Cost of the Si wafer itself accounts for over 50 % of energy conversion, therefore, economic use of Si can potentially reduced costs by a factor of 10 by reducing current mass/watt ratios of… More

STTR Phase I: High Efficiency Thin-film Photovoltaics on Low-cost Substrates by Layer Transfer

Award Year / Program / Phase:
2009 / STTR / Phase I
Award Amount:
$150,000.00
Agency:
NSF
Principal Investigator:
Research Institution:
University of New Mexico, Ctr for High Technical Materials
RI Contact:
Michael Dougher
Abstract:
This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Small Business Technology Transfer Phase I project will apply high aspect ratio, nm-scale, columnar, and crystalline Si structures as templates for high-quality growth of thin-film GaAs solar… More