HIGH POWER RF SWITCH

Award Information

Agency: Department of Defense

Branch: Navy

Contract: N/A

Agency Tracking Number: 3983

Amount: $248,100.00

Phase: Phase II

Program: SBIR

Solicitation Topic Code: N/A

Solicitation Number: N/A

Timeline

Solicitation Year: N/A

Award Year: 1989

Award Start Date (Proposal Award Date): N/A

Award End Date (Contract End Date): N/A

Small Business Information

Hittite Microwave Corporation

21 Cabot Rd

Woburn, MA 01801

United States

DUNS: N/A

HUBZone Owned: No

Woman Owned: No

Socially and Economically Disadvantaged: No

Principal Investigator

Name: Yalcin Ayasli
Phone: (617) 933-7267

Business Contact

Phone: () -

Research Institution

N/A

Abstract

PRESENTLY HIGH-POWER RADIO-FREQUENCY SWITCH DEVICES ARE CONSTRUCTED USING PACKAGED PIN DIODES. DUE TO THE HIGH THERMAL RESISTIVITY OF THESE DIODES, SWITCHING AT HIGH CW POWER LEVELS IS DIFFICULT. FURTHERMORE THE DRIVER CIRCUIT REQUIREMENTS FOR THE CONTROL OF THESE DEVICES ARE HIGH, RESULTING IN REDUCED SWITCHING SPEED AND BANDWIDTH, AS WELL AS INCREASED VOLUME, WEIGHT, AND COST. IN THIS PROPOSAL AN ALTERNATIVE APPROACH, BASED ON GALLIUM ARSENIDE MONOLITHIC FET TECHNOLOGY, IS PRESENTED. THESE DEVICES ARE EXAMINED IN TERMS OF THEIR POWER HANDLING CAPABILITIES TO MEET THE DESIRED REQUIREMENTS. THIS PROPOSAL CONTAINS THE BACKGROUND INFORMATION AND DETAILED DESCRIPTION OF THE TECHNICAL APPROACH FOR THE DESIGN OF SUCH GAAS FET-BASED SWITCHES. IT IS SHOWN THAT THESE COMPONENTS CAN MEET OR EXCEED ALL THE PERFORMANCE GOALS FOR VOLUME, WEIGHT, SPEED, INTEGRATION CAPABILITY, BANDWIDTH, AND SIMPLIFIED DRIVER REQUIREMENTS.

* Information listed above is at the time of submission. *

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HIGH POWER RF SWITCH