Fiscal Year:
1999
Title:
Miniature Wireless IR and Acoustic Sensor
Agency / Branch:
DOD / ARMY
Contract:
A982-1818
Award Amount:
$69,809.00
Abstract:
Not Available Spinnaker Semiconductor will develop its proprietary Schottky barrier CMOS technology (SB-CMOS) for space and other radiation hard environments. SB-CMOS offers a dramatic reduction in parasitic bipolar gain and therefore unconditional immunity to latch-up. It also has greatly increased hardness to node-discharge and other single-event-effects. The proposed SB-CMOS technology features MOS devices with minimum channel lengths of 50 nm and will therefore be ideal for high-speed digital and mixed-signal applications. Anticipated Benefits: 1) Unconditional immunity to latch-up 2) Greatly increased tolerance to node-discharge and other single event effects 3) 50 nm minimum channel length devices for high unity gain frequency 4) Silicon based, planar technology.
Principal Investigator:
Zack Mian
5184495504
Business Contact:
Small Business Information at Submission:
INTERNATIONAL ELECTRONIC MACHINES CORP.
60 Fourth Ave. Albany, NY 12202
EIN/Tax ID:
DUNS:
N/A
Number of Employees:
N/A
Woman-Owned:
No
Minority-Owned:
No
HUBZone-Owned:
No