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Company Information:

Company Name: Ii-vi Inc.
City: Saxonburg
State: PA
Zip+4: 16056
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $492,910.00 8
SBIR Phase II $2,025,504.00 5

Award List:

FINITE ELEMENT THERMODYNAMIC MODEL OF MULTI-ZONE CDTE VERTICAL BRIDGMAN GROWTH LEADING TO IMPROVED YIELDS OF ELECTROOPTIC MODULATOR

Award Year / Program / Phase: 1984 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Carl J. Johnson
Award Amount: $75,000.00

DEPOSITION OF LOW DEFECT DENSITY OPTICAL COATINGS

Award Year / Program / Phase: 1984 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. John H. Chaffin
Award Amount: $49,937.00

FINITE ELEMENT THERMODYNAMIC MODEL OF MULTI-ZONE CDTE VERTICAL BRIDGMAN GROWTH LEADING TO IMPROVED YIELDS OF ELECTROOPTIC MODULATOR

Award Year / Program / Phase: 1985 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Carl J. Johnson
Award Amount: $500,000.00
Abstract:
Cdte electrooptc modulator cystals up to10x10x50mm3 will be the device of choice in many co2 laser radar systems under development by afal. the objectives of this work is to significantly raise currently low yields in the manufacture of large electroooptic grade cdte single crystals thereby… More

DEPOSITION OF LOW DEFECT DENSITY OPTICAL COATINGS

Award Year / Program / Phase: 1985 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. John H. Chaffin
Award Amount: $500,000.00
Abstract:
This is a proposal to the naval weapons center for preparing low defect density optical coatings (fewer than 100/cm2, 1 - 10 um in size). ii-vi incorporated will construct a bent ion-plating coating apparatus, prepare and evaluate the coatings, and deliver samples to the naval weapon center.

RESOLUTION ELECTRON MICROSCOPY) MICROANALYSIS - INNOVATIVE METHODS

Award Year / Program / Phase: 1985 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: David g ryding
Award Amount: $80,000.00
Abstract:
Thin layer semiconducting devices have large potential in both defense and commerical applications. structures built in the hgcdte/ cdte, algaas and ingaasp/inp systems are in need of intensive materials investigation. transmission electron microscopy (tem) and its related techniques are powerful… More

DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Kai-yung Lay
Award Amount: $74,999.00

IMPROVED GROWTH OF CRYSTALS FOR INFRARED DETECTORS

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency: NSF
Principal Investigator: Donald r nichols
Award Amount: $50,000.00
Abstract:
Cdtese has recently been shown to have epd (etch pit density) levels in the mid-10(4)/cm(2) range, and due to thedistribution coefficient of se (1.03) in cdte, large crystals with uniform compositions and lattice constants have been produced by the vertical bridgman (vb) method. these features make… More

THE IMPACT AND REDUCTION OF CDZNTE SUBSTRATE DEFECTS ON OMVPE HGCDTE EPILAYER PERFORMANCE

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Donald R Nichols
Award Amount: $62,974.00

DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE

Award Year / Program / Phase: 1989 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Kai-yung Lay
Award Amount: $250,000.00
Abstract:
The growth of hg(1-x)cd(x)te layers by molecular beam epitaxy (mbe) and innovative in-situ wafer prepration prior to growth are key issues in developing second generation high performance ir detectors. the objective of this work is to establish the growth of cd(1-x)mn(x)te crystals that can serve as… More

THE IMPACT AND REDUCTION OF CDZNTE SUBSTRATE DEFECTS ON OMVPE HGCDTE EPILAYER PERFORMANCE

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Donald R Nichols
Award Amount: $500,000.00
Abstract:
Defects in the cdte family of substrates are of critical importance when growing expitaxial films of hgcdte by lpe, omvpe or mbe. precipitates, dislocations, and subgrain structure in substrates degrade the surface morphology and microstructure of expitaxial layers, leading to decreased epilayer… More

INTELLIGENT CONTROL OF BRIDGMAN CDZNTE CRYSTAL GROWTH

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Elgin Eissler , Principal Investigator
Award Amount: $50,000.00

GROWTH OF BULK II-VI CRYSTALS FOR VISIBLE LIGHT EMITTERS

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Elgin Eissler
Award Amount: $50,000.00
Abstract:
High quality zinc telluride (znte) and zinc selenide (znse) substrates are required for the current development of blue and green light emitting devices fabricated by molecular beam epitaxy (mbe) and organic metallic vapor phase epitaxy (omvpe) processes. a suitable bulk growth technique will not… More

INTELLIGENT CONTROL OF BRIDGMAN CDZNTE CRYSTAL GROWTH

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Elgin Eissler , Principal Investigator
Award Amount: $275,504.00
Abstract:
Large, high quality cdznte single crystals arerequired as hgcdte epitaxial substrates in the manufacture of infrared focal plane arrays. bridgman growth processes are currently employed to produce materials which meet some application requirements, but fall short in many state-of-the-art epitaxial… More