Cdte electrooptc modulator cystals up to10x10x50mm3 will be the device of choice in many co2 laser radar systems under development by afal. the objectives of this work is to significantly raise currently low yields in the manufacture of large electroooptic grade cdte single crystals thereby… More

This is a proposal to the naval weapons center for preparing low defect density optical coatings (fewer than 100/cm2, 1 - 10 um in size). ii-vi incorporated will construct a bent ion-plating coating apparatus, prepare and evaluate the coatings, and deliver samples to the naval weapon center.

Thin layer semiconducting devices have large potential in both defense and commerical applications. structures built in the hgcdte/ cdte, algaas and ingaasp/inp systems are in need of intensive materials investigation. transmission electron microscopy (tem) and its related techniques are powerful… More

Cdtese has recently been shown to have epd (etch pit density) levels in the mid-10(4)/cm(2) range, and due to thedistribution coefficient of se (1.03) in cdte, large crystals with uniform compositions and lattice constants have been produced by the vertical bridgman (vb) method. these features make… More

The growth of hg(1-x)cd(x)te layers by molecular beam epitaxy (mbe) and innovative in-situ wafer prepration prior to growth are key issues in developing second generation high performance ir detectors. the objective of this work is to establish the growth of cd(1-x)mn(x)te crystals that can serve as… More

Defects in the cdte family of substrates are of critical importance when growing expitaxial films of hgcdte by lpe, omvpe or mbe. precipitates, dislocations, and subgrain structure in substrates degrade the surface morphology and microstructure of expitaxial layers, leading to decreased epilayer… More

High quality zinc telluride (znte) and zinc selenide (znse) substrates are required for the current development of blue and green light emitting devices fabricated by molecular beam epitaxy (mbe) and organic metallic vapor phase epitaxy (omvpe) processes. a suitable bulk growth technique will not… More

Large, high quality cdznte single crystals arerequired as hgcdte epitaxial substrates in the manufacture of infrared focal plane arrays. bridgman growth processes are currently employed to produce materials which meet some application requirements, but fall short in many state-of-the-art epitaxial… More