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DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
5963
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
5963
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Ii-vi Inc.
375 Saxonburg Blvd Saxonburg, PA 16056
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1989
Title: DEVELOPMENT OF CD(1-X)MN(X)TE AS A LATTICE MATCHED SUBSTRATE FOR EPITAXY OF HG(1-X)CD(X)TE
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $250,000.00
 

Abstract:

THE GROWTH OF HG(1-X)CD(X)TE LAYERS BY MOLECULAR BEAM EPITAXY (MBE) AND INNOVATIVE IN-SITU WAFER PREPRATION PRIOR TO GROWTH ARE KEY ISSUES IN DEVELOPING SECOND GENERATION HIGH PERFORMANCE IR DETECTORS. THE OBJECTIVE OF THIS WORK IS TO ESTABLISH THE GROWTH OF CD(1-X)MN(X)TE CRYSTALS THAT CAN SERVE AS SUBSTRATES FOR THE GROWTH OF LATTICE-MATCHED HG(1-X)CD(X)TE LAYERS. PHASE I WILL INCLUDE: (1) SCALEUP OF CRYSTAL GROWTH TECHNOLOGY TO PRODUCE LARGE HIGH QUALITY SUBSTRATES, (2) ASSESSMENT OF WAFER AND SURFACE PROCESSING, (3) DEVELOPMENT OF INGOT CHARACTERIZATION AND (4) DEVELOPMENT OF SPUTTERCLEANING AND ANNEALING KINETICS UTILIZING X-RAY PHOTOEMISSION SPECTROSCOPY (XPS) AND PHOTOREFLECTANCE (PR) SPECTROSCOPY. PHASE II IS ENVISIONED TO INCLUDE: (1) PURIFICATION OF SOURCE MATERIALS, (2) DEVELOPMENT OF ADVANCED GROWTH TECHNOLOGY TO IMPROVE THE CRYSTAL QUALITY, (3) DEVELOPMENT OF ADVANCED CHARACTERIZATION TECHNOLOGY, (4) DEVELOPMENT OF IN-SITU FINAL WAFER PREPARATION AND GROWTH IN AN MBE SYSTEM.

Principal Investigator:

Kai-yung Lay
4123524455

Business Contact:

Small Business Information at Submission:

Ii-vi Inc.
Saxonburg Blvd Saxonburg, PA 16056

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No