USA flag logo/image

An Official Website of the United States Government

High Efficiency InGaN Solar Cells

Award Information

Agency:
Department of Defense
Branch:
Office of the Secretary of Defense
Award ID:
83120
Program Year/Program:
2008 / SBIR
Agency Tracking Number:
O071-ES4-1032
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Dr Houston, TX 77096-4934
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2008
Title: High Efficiency InGaN Solar Cells
Agency / Branch: DOD / OSD
Contract: FA9453-08-C-0111
Award Amount: $749,998.00
 

Abstract:

The objective of this proposal is to develop InGaN photovoltaic devices with high conversion efficiencies for DOD concentrator terrestrial and AM0 orbital power generation. InGaN can be fabricated to span a wide bandgap range from ~0.7 to 3.4 eV and matches well to the solar emission. The combined thermal stability and radiation hardness higher than that of other solar cell materials currently in use, make InGaN a particularly attractive material for high concentration, high temperature, and space environments. The proposed work would result in two high performance products. One product will be an all-InGaN multijunction cell having high efficiencies with improved radiation hardness, excellent high temperature and chemical stability, and low toxicity. The second product will be an InGaN cell for synergistic near term incorporation into existing photovoltaic technologies as a tandem booster.

Principal Investigator:

Chris Boney
Research Scientist
7137487926
cboney@imsensors.com

Business Contact:

David Starikov
Director of Research
7137487926
dstarikov@imsensors.com
Small Business Information at Submission:

INTEGRATED MICRO SENSORS, INC.
10814 Atwell Drive Houston, TX 77096

EIN/Tax ID: 861076501
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No