High Efficiency InGaN Solar Cells
Agency / Branch:
DOD / OSD
The objective of this proposal is to develop InGaN photovoltaic devices with high conversion efficiencies for DOD concentrator terrestrial and AM0 orbital power generation. InGaN can be fabricated to span a wide bandgap range from ~0.7 to 3.4 eV and matches well to the solar emission. The combined thermal stability and radiation hardness higher than that of other solar cell materials currently in use, make InGaN a particularly attractive material for high concentration, high temperature, and space environments. The proposed work would result in two high performance products. One product will be an all-InGaN multijunction cell having high efficiencies with improved radiation hardness, excellent high temperature and chemical stability, and low toxicity. The second product will be an InGaN cell for synergistic near term incorporation into existing photovoltaic technologies as a tandem booster.
Small Business Information at Submission:
INTEGRATED MICRO SENSORS, INC.
10814 Atwell Drive Houston, TX 77096
Number of Employees: