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InGaN High Temperature Photovoltaic Cells

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
90607
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
084269
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Dr Houston, TX 77096-4934
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: InGaN High Temperature Photovoltaic Cells
Agency: NASA
Contract: NNX09CD08P
Award Amount: $99,956.00
 

Abstract:

The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ýýC to 250ýýC. At the end of the Phase I, the technology will be at TRL 3.

Principal Investigator:

Chris Boney
Principal Investigator
7137487926
cboney@imsensors.com

Business Contact:

David Starikov
Director of Research
7137487926
dstarikov@imsensors.com
Small Business Information at Submission:

Integrated Micro Sensors, Inc.
10814 Atwell Drive Houston, TX 77096

EIN/Tax ID: 861076501
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No