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High Bandgap InGaN Solar Cell

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
91829
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
08SB2-0797
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Dr Houston, TX 77096-4934
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: High Bandgap InGaN Solar Cell
Agency / Branch: DOD / DARPA
Contract: W31P4Q-09-C-0168
Award Amount: $98,956.00
 

Abstract:

The objective of this Phase I project is to demonstrate InGaN materials of high quality appropriate for single junction solar cells for DOD terrestrial power generation. A single junction InGaN cell with a bandgap between 2.4 and 2.8 eV combined with silicon or other solar cell technology in a multi-junction device could provide power conversion efficiency exceeding 40%. In order to do so, the InGaN material must have suitable doping levels and good transparency to sub-bandgap light. In this project, we investigate the feasibility of high bandgap InGaN solar cell by demonstrating the materials growth, documenting the material properties, and modeling the design for a prototype solar cell.

Principal Investigator:

Chris Boney
Research Scientist
7137487926
cboney@imsensors.com

Business Contact:

David Starikov
Director of Research
7137487926
dstarikov@imsensors.com
Small Business Information at Submission:

INTEGRATED MICRO SENSORS, INC.
10814 Atwell Drive Houston, TX 77096

EIN/Tax ID: 861076501
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No