High Bandgap InGaN Solar Cell
Agency / Branch:
DOD / DARPA
The objective of this Phase I project is to demonstrate InGaN materials of high quality appropriate for single junction solar cells for DOD terrestrial power generation. A single junction InGaN cell with a bandgap between 2.4 and 2.8 eV combined with silicon or other solar cell technology in a multi-junction device could provide power conversion efficiency exceeding 40%. In order to do so, the InGaN material must have suitable doping levels and good transparency to sub-bandgap light. In this project, we investigate the feasibility of high bandgap InGaN solar cell by demonstrating the materials growth, documenting the material properties, and modeling the design for a prototype solar cell.
Small Business Information at Submission:
INTEGRATED MICRO SENSORS, INC.
10814 Atwell Drive Houston, TX 77096
Number of Employees: