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Company Information:

Company Name:
INTELLIGENT EPITAXY TECHNOLOGY, INC.
Address:
1250 E. Collins Blvd.
Richardson, TX
Phone:
(972) 234-0068
URL:
N/A
EIN:
752782937
DUNS:
59803945
Number of Employees:
25
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $550,000.00 6
STTR Phase I $199,924.00 2
STTR Phase II $375,000.00 1

Award List:

Predictive Modeling for Intersubband Quantum Devices Grown by MBE

Award Year / Program / Phase:
2005 / STTR / Phase I
Award Amount:
$99,924.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Business Development
Research Institution:
UNIV. OF TEXAS - DALLAS
RI Contact:
William R. Frensley
Abstract:
This Phase I STTR effort will demonstrate intersubband quantum device modeling capability using UT-Dallas BandProf software package and optical coupling efficiency modeling using SMU optical cavity software packages. The software model will predict fabricated device characteristics based on data… More

Predictive Modeling/Control for Intersubband and Interband Quantum Devices Grown by MBE

Award Year / Program / Phase:
2007 / STTR / Phase II
Award Amount:
$375,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Bus. Dev.
Research Institution:
UNIV. OF TEXAS - DALLAS
RI Contact:
William R. Frensley
Abstract:
This Phase II STTR effort will demonstrate intersubband and interband quantum device modeling capability using UT-Dallas BandProf software package and optical coupling efficiency modeling using SMU optical cavity software packages. The software model will predict fabricated device characteristics… More

Broadband LWIR C-IHET FPA for Discrimination Seekers

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Bus. Dev.
Research Institution:
UNIV. OF ILLINOIS AT CHICAGO
RI Contact:
Mitra Dutta
Abstract:
This Phase I STTR proposes to develop Focal Plane Array (FPA) based on Corrugated-Infrared Hot Electron Transistor (C-IHET) technology as a passive sensor for discrimination seekers. The initial goal of achieving high sensitivity with operating temperature >77K for C-IHET in the 8 - 12 m LWIR… More

Development of Radiation Hardened Type II SLS for Smart IR FPA for Space Applications

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Bus Dev.
Abstract:
This Phase I SBIR effort will develop low dark-current and high radiation-hardness infrared detector technology based on unipolar barrier structure Type II strained-layer superlattices. The design architectures and process technologies developed to minimize dark current are expected to enhance… More

Type II SLS for 2-Color FPA for Interceptor Seekers

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Bus Dev.
Abstract:
This Phase I SBIR effort will develop robust and high performance infrared detector technology based on two-color Type II strained-layer superlattices (SLS). The design architectures and process technologies in Sb-based SLS enable high-performance two-color LW/LW detectors. The SLS detector design… More

Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Bus Dev.
Abstract:
This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be prepared via production III-V Molecular Beam Epitaxy (MBE) reactor. The 211B InSb substrate is… More

Dual Band MWIR/LWIR SLS FPA

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$80,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Bus Dev.
Abstract:
This Phase I SBIR effort will develop dual-band mid-wavelength infrared/long-wavelength infrared (MWIR/LWIR) detector technology based on dual monolithic type-II strained-layer superlattices (SLS). The dual-band detector will operate in either MWIR or LWIR mode depending on the applied voltage bias,… More

Large Diameter GaSb Substrate for Large Format SLS FPA Applications

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
DOD
Principal Investigator:
Paul Pinsukanjana, VP of Tech./Business – (972) 234-0068
Abstract:
This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this program, IntelliEPI proposes to develop 4"GaSb crystal pulling capability based on the… More

Advanced Ternary SLS for 2-Color LW/LW FPA for Interceptor Seekers

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
DOD
Principal Investigator:
Paul Pinsukanjana, VP of Technology/Business Dev. – (972) 234-0068
Abstract:
This Phase I SBIR effort will develop robust and high performance infrared detector technology based on GaSb-based Type II strained-layer superlattices (SLS). The advanced device design will be based on the Naval Research Lab (NRL) W-barrier and Ternary absorber epitaxy materials system. The… More