Predictive Modeling for Intersubband Quantum Devices Grown by MBE
Agency / Branch:
DOD / USAF
This Phase I STTR effort will demonstrate intersubband quantum device modeling capability using UT-Dallas BandProf software package and optical coupling efficiency modeling using SMU optical cavity software packages. The software model will predict fabricated device characteristics based on data inputs from real-time in-situ growth monitoring and post-growth epi materials characterization. The Quantum device modeling will be applied to epi materials grown by Molecular Beam Epitaxy (MBE), such as QWIP's for mid wavelength IR (MWIR) and long wavelength IR (LWIR). For this Phase I, quantum device modeling based on Thomas-Fermi approach will be utilized to calculate the intersubband QWIP (Quantum Well Infrared Photodector) action from ground state to quasi-bound state. Cross correlation between model and device parameters will be performed for GaAs/AlGaAs LWIR and InGaAs/GaAs/AlGaAs MWIR QWIP's as proof of concept.
Small Business Information at Submission:
VP of Tech./Business Development
Research Institution Information:
Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd. Richardson, TX 75081
Number of Employees:
UNIV. OF TEXAS - DALLAS
Electrical Engineering Dept., PO Box 830688, EC-33
Richardson, TX 75083
William R. Frensley
Nonprofit college or university