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Radiation Hardening of Monolithically Integrated Quantum Well Intermixed…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
53085
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
01-0111
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
INTERNATIONAL PHOTONICS CONSULTANTS, INC
30 Tierra Monte NE Albuquerque,, NM 87122 2102
View profile »
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2001
Title: Radiation Hardening of Monolithically Integrated Quantum Well Intermixed Semiconductor Components
Agency / Branch: DOD / MDA
Contract: DTRA01-01-P-0152
Award Amount: $64,500.00
 

Abstract:

Radiation Hardening of Monolithically Integrated Quantum Well Intermixed Semiconductor Components.Photonic devices (diode lasers, modulators, photodetectors, etc.) are undergoing rapid transition into terrestrial and space applications. However, roadblocks still exist for monolithically integrating these components for optoelectronic integratedcircuits (OEICs). Since semiconductor growth technology is essential planar, it is very difficult to grow different refractive index materials during a single growth step. The likihood of introducing impurities and causing defect formation during re-growthprocesses is high, usually resulting in reduced optical and electrical performance. In some instances, these defects and impurities may interact in the presence of radiation, to degrade device performance. A potential solution for addressing the hardeningissues arising from the miniaturization of photonic systems while still achieving the desired high degree of integration and miniaturization, is using Quantum Well Intermixing (QWI) technology for achieving impurity free vacancy diffusion (IFVD). QWIalters the material bandgap and refractive indices without requiring re-growth, providing a relatively simple and low cost approach for monolithic integration of semiconductor photonic technologies. In Phase I, QWI processed components will be fabricatedand irradiated by gamma-rays, in order to evaluate and demonstrate the potential for developing radiation hardened IFVD-QWI processed OEICs.Fabrication of semiconductor components using quantum well intermixing techniques may result in radiation hardenedmonolithically integrated OEICs. The innovative survivability technology has great potential for widespread commercial use and for providing miniaturized technology urgently required by aerospace and micro-satellite space systems.

Principal Investigator:

Edward Taylor
Principal Investigator
5057974799
INTPHOTON@AOL.COM

Business Contact:

Edward Taylor
Research Physicist
5057974799
INTPHOTON@AOL.COM
Small Business Information at Submission:

INTERNATIONAL PHOTONICS CONSULTANTS
30 Tierra Monte NE Albuquerque,, NM 87122

EIN/Tax ID: 850473022
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No